Physical and electrical properties of Ti-doped Er2 O3 films for high-k gate dielectrics

Chuan Hsi Liu; Tung Ming Pan; Wei Hao Shu; Kuo Chan Huang

doi:10.1149/1.2742497

Physical and electrical properties of Ti-doped Er2 O3 films for high-k gate dielectrics

Chuan Hsi Liu^*, Tung Ming Pan, Wei Hao Shu, Kuo Chan Huang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Titanium-doped erbium oxide films on Si(100) have been investigated as an alternative gate dielectric. The dielectric films were characterized by X-ray photoelectron spectroscopy, atomic force microscopy, and electrical measurements. We found that the addition of Ti into Er2 O3 film after annealing at 700°C can reduce the SiOx formation at the interfacial layer and thus reduce the O diffusion during the film postthermal annealing process. Such suppression effect significantly improved the electrical properties of the dielectric films.

Original language	English
Pages (from-to)	G54-G57
Journal	Electrochemical and Solid-State Letters
Volume	10
Issue number	8
DOIs	https://doi.org/10.1149/1.2742497
Publication status	Published - 2007
Externally published	Yes

ASJC Scopus subject areas

General Chemical Engineering
General Materials Science
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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@article{86fcdc35679e490dafacc2b4773e444f,

title = "Physical and electrical properties of Ti-doped Er2 O3 films for high-k gate dielectrics",

abstract = "Titanium-doped erbium oxide films on Si(100) have been investigated as an alternative gate dielectric. The dielectric films were characterized by X-ray photoelectron spectroscopy, atomic force microscopy, and electrical measurements. We found that the addition of Ti into Er2 O3 film after annealing at 700°C can reduce the SiOx formation at the interfacial layer and thus reduce the O diffusion during the film postthermal annealing process. Such suppression effect significantly improved the electrical properties of the dielectric films.",

author = "Liu, {Chuan Hsi} and Pan, {Tung Ming} and Shu, {Wei Hao} and Huang, {Kuo Chan}",

year = "2007",

doi = "10.1149/1.2742497",

language = "English",

volume = "10",

pages = "G54--G57",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

publisher = "Electrochemical Society, Inc.",

number = "8",

}

TY - JOUR

T1 - Physical and electrical properties of Ti-doped Er2 O3 films for high-k gate dielectrics

AU - Liu, Chuan Hsi

AU - Pan, Tung Ming

AU - Shu, Wei Hao

AU - Huang, Kuo Chan

PY - 2007

Y1 - 2007

N2 - Titanium-doped erbium oxide films on Si(100) have been investigated as an alternative gate dielectric. The dielectric films were characterized by X-ray photoelectron spectroscopy, atomic force microscopy, and electrical measurements. We found that the addition of Ti into Er2 O3 film after annealing at 700°C can reduce the SiOx formation at the interfacial layer and thus reduce the O diffusion during the film postthermal annealing process. Such suppression effect significantly improved the electrical properties of the dielectric films.

AB - Titanium-doped erbium oxide films on Si(100) have been investigated as an alternative gate dielectric. The dielectric films were characterized by X-ray photoelectron spectroscopy, atomic force microscopy, and electrical measurements. We found that the addition of Ti into Er2 O3 film after annealing at 700°C can reduce the SiOx formation at the interfacial layer and thus reduce the O diffusion during the film postthermal annealing process. Such suppression effect significantly improved the electrical properties of the dielectric films.

UR - http://www.scopus.com/inward/record.url?scp=34250377358&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34250377358&partnerID=8YFLogxK

U2 - 10.1149/1.2742497

DO - 10.1149/1.2742497

M3 - Article

AN - SCOPUS:34250377358

SN - 1099-0062

VL - 10

SP - G54-G57

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 8

ER -

Physical and electrical properties of Ti-doped Er2 O3 films for high-k gate dielectrics

Abstract

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