Physical and electrical properties of Ti-doped Er2 O3 films for high-k gate dielectrics

Chuan Hsi Liu*, Tung Ming Pan, Wei Hao Shu, Kuo Chan Huang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)


Titanium-doped erbium oxide films on Si(100) have been investigated as an alternative gate dielectric. The dielectric films were characterized by X-ray photoelectron spectroscopy, atomic force microscopy, and electrical measurements. We found that the addition of Ti into Er2 O3 film after annealing at 700°C can reduce the SiOx formation at the interfacial layer and thus reduce the O diffusion during the film postthermal annealing process. Such suppression effect significantly improved the electrical properties of the dielectric films.

Original languageEnglish
Pages (from-to)G54-G57
JournalElectrochemical and Solid-State Letters
Issue number8
Publication statusPublished - 2007
Externally publishedYes

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering


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