Physical and electrical properties of Ti-doped Er2 O3 films for high-k gate dielectrics

Chuan Hsi Liu, Tung Ming Pan, Wei Hao Shu, Kuo Chan Huang

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Titanium-doped erbium oxide films on Si(100) have been investigated as an alternative gate dielectric. The dielectric films were characterized by X-ray photoelectron spectroscopy, atomic force microscopy, and electrical measurements. We found that the addition of Ti into Er2 O3 film after annealing at 700°C can reduce the SiOx formation at the interfacial layer and thus reduce the O diffusion during the film postthermal annealing process. Such suppression effect significantly improved the electrical properties of the dielectric films.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume10
Issue number8
DOIs
Publication statusPublished - 2007
Externally publishedYes

Fingerprint

Dielectric films
Gate dielectrics
Electric properties
Physical properties
physical properties
electrical properties
Annealing
Erbium
Titanium
Oxide films
Atomic force microscopy
X ray photoelectron spectroscopy
annealing
erbium
electrical measurement
oxide films
titanium
retarding
photoelectron spectroscopy
atomic force microscopy

ASJC Scopus subject areas

  • Electrochemistry
  • Materials Science(all)

Cite this

Physical and electrical properties of Ti-doped Er2 O3 films for high-k gate dielectrics. / Liu, Chuan Hsi; Pan, Tung Ming; Shu, Wei Hao; Huang, Kuo Chan.

In: Electrochemical and Solid-State Letters, Vol. 10, No. 8, 2007.

Research output: Contribution to journalArticle

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