Photoreflectance study of GaAs/Al                         0.3                         Ga                         0.7                         As resonant asymmetric double quantum wells with Si δ-doping in side barriers

C. R. Lu; S. K. Du; J. R. Anderson; D. R. Stone; R. A. Wilson

doi:10.1016/0169-4332(95)00292-8

Photoreflectance study of GaAs/Al _0.3 Ga _0.7 As resonant asymmetric double quantum wells with Si δ-doping in side barriers

C. R. Lu^*, S. K. Du, J. R. Anderson, D. R. Stone, R. A. Wilson

^*Corresponding author for this work

Department of Physics

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1 Citation (Scopus)

Abstract

The electro-optical properties of GaAs/Al _0.3 Ga _0.7 As resonant asymmetric double quantum wells with Si δ-doping in side barriers have been investigated by photoreflectance spectroscopy from 20 K to room temperature. The modulated reflectance spectra consist of Franz-Keldysh oscillations above the Al _0.3 Ga _0.7 As band gap, and various excitonic transition features of the quantum well system above the GaAs band edge. The first and the second excitonic transitions are weak and broadened due to the subband filling effect. The third excitonic transition has the strongest optical response, and we believe this is due to the resonance between the narrow well and the wide well subbands. The enhancement of the modulated reflectance signal, ΔR/R, at about 50 K also agrees with the subband resonance model.

Original language	English
Pages (from-to)	543-546
Number of pages	4
Journal	Applied Surface Science
Volume	92
DOIs	https://doi.org/10.1016/0169-4332(95)00292-8
Publication status	Published - 1996 Feb

ASJC Scopus subject areas

General Chemistry
Condensed Matter Physics
General Physics and Astronomy
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1016/0169-4332(95)00292-8

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Lu, C. R., Du, S. K., Anderson, J. R., Stone, D. R., & Wilson, R. A. (1996). Photoreflectance study of GaAs/Al _0.3 Ga _0.7 As resonant asymmetric double quantum wells with Si δ-doping in side barriers Applied Surface Science, 92, 543-546. https://doi.org/10.1016/0169-4332(95)00292-8

Photoreflectance study of GaAs/Al _0.3 Ga _0.7 As resonant asymmetric double quantum wells with Si δ-doping in side barriers . / Lu, C. R.; Du, S. K.; Anderson, J. R. et al.
In: Applied Surface Science, Vol. 92, 02.1996, p. 543-546.

Research output: Contribution to journal › Article › peer-review

Lu, CR, Du, SK, Anderson, JR, Stone, DR & Wilson, RA 1996, ' Photoreflectance study of GaAs/Al _0.3 Ga _0.7 As resonant asymmetric double quantum wells with Si δ-doping in side barriers ', Applied Surface Science, vol. 92, pp. 543-546. https://doi.org/10.1016/0169-4332(95)00292-8

Lu CR, Du SK, Anderson JR, Stone DR, Wilson RA. Photoreflectance study of GaAs/Al _0.3 Ga _0.7 As resonant asymmetric double quantum wells with Si δ-doping in side barriers Applied Surface Science. 1996 Feb;92:543-546. doi: 10.1016/0169-4332(95)00292-8

Lu, C. R. ; Du, S. K. ; Anderson, J. R. et al. / Photoreflectance study of GaAs/Al _0.3 Ga _0.7 As resonant asymmetric double quantum wells with Si δ-doping in side barriers In: Applied Surface Science. 1996 ; Vol. 92. pp. 543-546.

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title = " Photoreflectance study of GaAs/Al 0.3 Ga 0.7 As resonant asymmetric double quantum wells with Si δ-doping in side barriers ",

abstract = " The electro-optical properties of GaAs/Al 0.3 Ga 0.7 As resonant asymmetric double quantum wells with Si δ-doping in side barriers have been investigated by photoreflectance spectroscopy from 20 K to room temperature. The modulated reflectance spectra consist of Franz-Keldysh oscillations above the Al 0.3 Ga 0.7 As band gap, and various excitonic transition features of the quantum well system above the GaAs band edge. The first and the second excitonic transitions are weak and broadened due to the subband filling effect. The third excitonic transition has the strongest optical response, and we believe this is due to the resonance between the narrow well and the wide well subbands. The enhancement of the modulated reflectance signal, ΔR/R, at about 50 K also agrees with the subband resonance model. ",

author = "Lu, {C. R.} and Du, {S. K.} and Anderson, {J. R.} and Stone, {D. R.} and Wilson, {R. A.}",

note = "Funding Information: This work has been supported in part by the National Science Council of ROC.",

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AU - Anderson, J. R.

AU - Stone, D. R.

AU - Wilson, R. A.

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AB - The electro-optical properties of GaAs/Al 0.3 Ga 0.7 As resonant asymmetric double quantum wells with Si δ-doping in side barriers have been investigated by photoreflectance spectroscopy from 20 K to room temperature. The modulated reflectance spectra consist of Franz-Keldysh oscillations above the Al 0.3 Ga 0.7 As band gap, and various excitonic transition features of the quantum well system above the GaAs band edge. The first and the second excitonic transitions are weak and broadened due to the subband filling effect. The third excitonic transition has the strongest optical response, and we believe this is due to the resonance between the narrow well and the wide well subbands. The enhancement of the modulated reflectance signal, ΔR/R, at about 50 K also agrees with the subband resonance model.

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Photoreflectance study of GaAs/Al _0.3 Ga _0.7 As resonant asymmetric double quantum wells with Si δ-doping in side barriers

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