Photoreflectance study of GaAs/Al 0.3 Ga 0.7 As resonant asymmetric double quantum wells with Si δ-doping in side barriers

C. R. Lu, S. K. Du, J. R. Anderson, D. R. Stone, R. A. Wilson

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Abstract

The electro-optical properties of GaAs/Al 0.3 Ga 0.7 As resonant asymmetric double quantum wells with Si δ-doping in side barriers have been investigated by photoreflectance spectroscopy from 20 K to room temperature. The modulated reflectance spectra consist of Franz-Keldysh oscillations above the Al 0.3 Ga 0.7 As band gap, and various excitonic transition features of the quantum well system above the GaAs band edge. The first and the second excitonic transitions are weak and broadened due to the subband filling effect. The third excitonic transition has the strongest optical response, and we believe this is due to the resonance between the narrow well and the wide well subbands. The enhancement of the modulated reflectance signal, ΔR/R, at about 50 K also agrees with the subband resonance model.

Original languageEnglish
Pages (from-to)543-546
Number of pages4
JournalApplied Surface Science
Volume92
DOIs
Publication statusPublished - 1996 Feb

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ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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