Skip to main navigation
Skip to search
Skip to main content
National Taiwan Normal University Home
Help & FAQ
English
中文
Home
Profiles
Research units
Research output
Projects
Press/Media
Datasets
Activities
Prizes
Student theses
Search by expertise, name or affiliation
Photoreflectance lineshape analysis of the selectively-doped GaAs/Al
0.3
Ga
0.7
As microstructure
C. R. Lu
*
, C. L. Chang, C. H. Liou
*
Corresponding author for this work
Department of Physics
Research output
:
Contribution to journal
›
Article
›
peer-review
1
Citation (Scopus)
Overview
Fingerprint
Fingerprint
Dive into the research topics of 'Photoreflectance lineshape analysis of the selectively-doped GaAs/Al
0.3
Ga
0.7
As microstructure'. Together they form a unique fingerprint.
Sort by
Weight
Alphabetically
INIS
microstructure
100%
spectra
100%
doped materials
100%
gallium arsenides
100%
layers
60%
electric fields
40%
surfaces
20%
depth
20%
interfaces
20%
dielectrics
20%
space charge
20%
photons
20%
bending
20%
Chemistry
Microstructure
100%
Spectra
100%
Lineshape
100%
Electric Field
40%
Surface
20%
Reaction Temperature
20%
Dielectric Function
20%
Space Charge
20%
Band Bending
20%
Physics
Spectra
100%
Gaps
40%
Electric Fields
40%
Model
20%
Temperature
20%
Dielectrics
20%
Region
20%
Magnitude
20%
Space Charge
20%
Photons
20%
Reflectance
20%