Photoreflectance lineshape analysis of the selectively-doped GaAs/Al0.3Ga0.7As microstructure

C. R. Lu*, C. L. Chang, C. H. Liou

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


The photoreflectance spectra of the selectively-doped GaAs/Al0.3Ga0.7As microstructure have been studied at various temperatures. The spectra contained two sets of oscillatory features above the gap of GaAs, and one set above the gap of Al0.3Ga0.7As. The sources of different features in the spectra were identified by comparing the spectra after different layers were etched off. The magnitudes of the internal fields were obtained from the band bendings near the surface or interfaces. A multilayer model with a different electric field in each layer was used to take into account the depth dependence of the dielectric functions due to different materials and the electric fields in the space-charge regions. The calculated lineshapes agree well with the observed photon modulated reflectance spectra.

Original languageEnglish
Pages (from-to)810-818
Number of pages9
JournalChinese Journal of Physics
Issue number31
Publication statusPublished - 1996 Jun

ASJC Scopus subject areas

  • General Physics and Astronomy


Dive into the research topics of 'Photoreflectance lineshape analysis of the selectively-doped GaAs/Al0.3Ga0.7As microstructure'. Together they form a unique fingerprint.

Cite this