Abstract
We investigate GaNAs/GaAs multiple quantum well structures using the photoreflectance spectroscopy at various temperatures. The modulated optical response consists of quantum well excitonic transitions and band edge transitions that exhibits Franz-Keldysh oscillatory features. The bowing parameter, effective mass, and the band-offset value were adjusted to obtain the subband energies to best fit the observed quantum well transition energies. The period of the Franz-Keldysh oscillations indicates the strength of the internal field.
| Original language | English |
|---|---|
| Title of host publication | Silicon Carbide and Related Materials 2001 |
| Editors | S. Yoshida, S. Nishino, H. Harima, T. Kimoto |
| Publisher | Trans Tech Publications Ltd |
| Pages | 1497-1500 |
| Number of pages | 4 |
| ISBN (Print) | 9780878498949 |
| DOIs | |
| Publication status | Published - 2002 |
| Event | International Conference on Silicon Carbide and Related Materials, ICSCRM 2001 - Tsukuba, Japan Duration: 2001 Oct 28 → 2001 Nov 2 |
Publication series
| Name | Materials Science Forum |
|---|---|
| Volume | 389-393 |
| ISSN (Print) | 0255-5476 |
| ISSN (Electronic) | 1662-9752 |
Other
| Other | International Conference on Silicon Carbide and Related Materials, ICSCRM 2001 |
|---|---|
| Country/Territory | Japan |
| City | Tsukuba |
| Period | 2001/10/28 → 2001/11/02 |
Keywords
- GaNAs/GaAs
- Photoreflectance
- Quantum wells
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering