Photoreflectance characterization of GaNAs/GaAs multiple quantum well structures

Chien Rong Lu, Jia Ren Lee, Yo Yu Chen, Wei I. Lee, Shih Chang Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We investigate GaNAs/GaAs multiple quantum well structures using the photoreflectance spectroscopy at various temperatures. The modulated optical response consists of quantum well excitonic transitions and band edge transitions that exhibits Franz-Keldysh oscillatory features. The bowing parameter, effective mass, and the band-offset value were adjusted to obtain the subband energies to best fit the observed quantum well transition energies. The period of the Franz-Keldysh oscillations indicates the strength of the internal field.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2001
EditorsH. Harima, T. Kimoto, S. Nishino, S. Yoshida
PublisherTrans Tech Publications Ltd
Pages1497-1500
Number of pages4
ISBN (Print)9780878498949
DOIs
Publication statusPublished - 2002 Jan 1
EventInternational Conference on Silicon Carbide and Related Materials, ICSCRM 2001 - Tsukuba, Japan
Duration: 2001 Oct 282001 Nov 2

Publication series

NameMaterials Science Forum
Volume389-393
ISSN (Print)0255-5476

Other

OtherInternational Conference on Silicon Carbide and Related Materials, ICSCRM 2001
CountryJapan
CityTsukuba
Period01/10/2801/11/2

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Keywords

  • GaNAs/GaAs
  • Photoreflectance
  • Quantum wells

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Lu, C. R., Lee, J. R., Chen, Y. Y., Lee, W. I., & Lee, S. C. (2002). Photoreflectance characterization of GaNAs/GaAs multiple quantum well structures. In H. Harima, T. Kimoto, S. Nishino, & S. Yoshida (Eds.), Silicon Carbide and Related Materials 2001 (pp. 1497-1500). (Materials Science Forum; Vol. 389-393). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.389-393.1497