Abstract
The wavelength shifts in the photoluminescence (PL) from low indium composition (∼ 3%) InGaN epitaxial thin films, grown on sapphire substrates by metalorganic chemical vapour deposition, has been studied by a combination of experiment and theory. As temperature increases from 6 K, the PL peak energy red-shifts very slightly first, then blue-shifts to reach a maximum at near 100 K, and red-shifts again till room temperature. This unique PL behaviour, indicating the existence of the phase separation, is interpreted qualitatively from the spatial variation of band structure due to the In-compositional fluctuation. Theoretical calculation, based upon a model involving the band-tail states in the radiative recombination, explains the experimental data successfully.
| Original language | English |
|---|---|
| Pages (from-to) | 118-122 |
| Number of pages | 5 |
| Journal | Thin Solid Films |
| Volume | 498 |
| Issue number | 1-2 |
| DOIs | |
| Publication status | Published - 2006 Mar 1 |
| Event | Proceedings of the Third Asian Conference on Chemical Vapor Deposition (Third Asian-CVD), Third Asian CVD - Duration: 2004 Nov 12 → 2004 Nov 14 |
Keywords
- Characterization
- Crystal structure
- GaN
- InGaN
- MOCVD
- Metalorganic chemical vapor deposition
- Nitrides
- Phase separation
- Photoluminescence
- Segregation
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry