Photoluminescence characteristics of low indium composition InGaN thin films grown on sapphire by metalorganic chemical vapor deposition

Z. C. Feng, W. Liu, S. J. Chua, J. W. Yu, C. C. Yang, T. R. Yang, J. Zhao

Research output: Contribution to journalConference article

11 Citations (Scopus)

Abstract

The wavelength shifts in the photoluminescence (PL) from low indium composition (∼ 3%) InGaN epitaxial thin films, grown on sapphire substrates by metalorganic chemical vapour deposition, has been studied by a combination of experiment and theory. As temperature increases from 6 K, the PL peak energy red-shifts very slightly first, then blue-shifts to reach a maximum at near 100 K, and red-shifts again till room temperature. This unique PL behaviour, indicating the existence of the phase separation, is interpreted qualitatively from the spatial variation of band structure due to the In-compositional fluctuation. Theoretical calculation, based upon a model involving the band-tail states in the radiative recombination, explains the experimental data successfully.

Original languageEnglish
Pages (from-to)118-122
Number of pages5
JournalThin Solid Films
Volume498
Issue number1-2
DOIs
Publication statusPublished - 2006 Mar 1
EventProceedings of the Third Asian Conference on Chemical Vapor Deposition (Third Asian-CVD), Third Asian CVD -
Duration: 2004 Nov 122004 Nov 14

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Keywords

  • Characterization
  • Crystal structure
  • GaN
  • InGaN
  • MOCVD
  • Metalorganic chemical vapor deposition
  • Nitrides
  • Phase separation
  • Photoluminescence
  • Segregation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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