Photoluminescence and Raman studies of nanocrystalline silicon enclosed in a SiO 2 shell

Te Yu Chien, Chi-Ta Chia, Tse Chi Lin, Si Chen Lee

Research output: Contribution to journalArticle

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Abstract

Spherical silicon-nanocrystals prepared by the thermal evaporation method were examined using Raman and photoluminescence measurements. The Raman analysis indicates that the content of the crystalline silicon decayed exponentially over time, which explains the reduction in size of the silicon-nanocrystals caused by oxidation. The visible photoluminescence spectra of silicon-nanocrystals are about the same. Although the size of the samples varied significantly, the temporal variation of the photoluminescence spectra was negligible, except for the very first day when samples were taken out from the growth chamber. Based on the Raman and photoluminescence results, we conclude that the red photoluminescence of silicon-nanocrystals near 680 nm is mainly attributed to defect states residing at the Si/SiO 2 interfaces.

Original languageEnglish
Pages (from-to)91-97
Number of pages7
JournalChinese Journal of Physics
Volume46
Issue number1
Publication statusPublished - 2008 Feb 1

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photoluminescence
nanocrystals
silicon
phytotrons
evaporation
oxidation
defects

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Photoluminescence and Raman studies of nanocrystalline silicon enclosed in a SiO 2 shell . / Chien, Te Yu; Chia, Chi-Ta; Lin, Tse Chi; Lee, Si Chen.

In: Chinese Journal of Physics, Vol. 46, No. 1, 01.02.2008, p. 91-97.

Research output: Contribution to journalArticle

@article{a6782988bcda4c3a8ff9c6577ce8da63,
title = "Photoluminescence and Raman studies of nanocrystalline silicon enclosed in a SiO 2 shell",
abstract = "Spherical silicon-nanocrystals prepared by the thermal evaporation method were examined using Raman and photoluminescence measurements. The Raman analysis indicates that the content of the crystalline silicon decayed exponentially over time, which explains the reduction in size of the silicon-nanocrystals caused by oxidation. The visible photoluminescence spectra of silicon-nanocrystals are about the same. Although the size of the samples varied significantly, the temporal variation of the photoluminescence spectra was negligible, except for the very first day when samples were taken out from the growth chamber. Based on the Raman and photoluminescence results, we conclude that the red photoluminescence of silicon-nanocrystals near 680 nm is mainly attributed to defect states residing at the Si/SiO 2 interfaces.",
author = "Chien, {Te Yu} and Chi-Ta Chia and Lin, {Tse Chi} and Lee, {Si Chen}",
year = "2008",
month = "2",
day = "1",
language = "English",
volume = "46",
pages = "91--97",
journal = "Chinese Journal of Physics",
issn = "0577-9073",
publisher = "Physical Society of the Republic of China",
number = "1",

}

TY - JOUR

T1 - Photoluminescence and Raman studies of nanocrystalline silicon enclosed in a SiO 2 shell

AU - Chien, Te Yu

AU - Chia, Chi-Ta

AU - Lin, Tse Chi

AU - Lee, Si Chen

PY - 2008/2/1

Y1 - 2008/2/1

N2 - Spherical silicon-nanocrystals prepared by the thermal evaporation method were examined using Raman and photoluminescence measurements. The Raman analysis indicates that the content of the crystalline silicon decayed exponentially over time, which explains the reduction in size of the silicon-nanocrystals caused by oxidation. The visible photoluminescence spectra of silicon-nanocrystals are about the same. Although the size of the samples varied significantly, the temporal variation of the photoluminescence spectra was negligible, except for the very first day when samples were taken out from the growth chamber. Based on the Raman and photoluminescence results, we conclude that the red photoluminescence of silicon-nanocrystals near 680 nm is mainly attributed to defect states residing at the Si/SiO 2 interfaces.

AB - Spherical silicon-nanocrystals prepared by the thermal evaporation method were examined using Raman and photoluminescence measurements. The Raman analysis indicates that the content of the crystalline silicon decayed exponentially over time, which explains the reduction in size of the silicon-nanocrystals caused by oxidation. The visible photoluminescence spectra of silicon-nanocrystals are about the same. Although the size of the samples varied significantly, the temporal variation of the photoluminescence spectra was negligible, except for the very first day when samples were taken out from the growth chamber. Based on the Raman and photoluminescence results, we conclude that the red photoluminescence of silicon-nanocrystals near 680 nm is mainly attributed to defect states residing at the Si/SiO 2 interfaces.

UR - http://www.scopus.com/inward/record.url?scp=40549146197&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=40549146197&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:40549146197

VL - 46

SP - 91

EP - 97

JO - Chinese Journal of Physics

JF - Chinese Journal of Physics

SN - 0577-9073

IS - 1

ER -