Photoemission assignments of HxSiO4-x fragments at the Si/SiOx interface

Sunghee Lee, Mark M. Banaszak Holl, Wei-Hsiu Hung, F. R. McFeely

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

Hydrogenation of the silicon/silicon oxide interface is shown to cause changes in every feature spectroscopically discernible by soft x-ray photoemission in addition to depinning the Fermi level. A new feature is observed to grow in at 3.6 eV with respect to bulk Si upon exposure to atomic hydrogen at the expense of interface states intermediate between 3.6 and 0 eV. Assignments of photoemission features are discussed in the context of previous model studies of the interface and issues of electronic versus chemical reversibility are discussed.

Original languageEnglish
Pages (from-to)1081-1083
Number of pages3
JournalApplied Physics Letters
Volume68
Issue number8
DOIs
Publication statusPublished - 1996 Dec 1

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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