Photoemission assignments of HxSiO4-x fragments at the Si/SiOx interface

Sunghee Lee, Mark M. Banaszak Holl, Wei Hsiu Hung, F. R. McFeely

Research output: Contribution to journalArticle

Abstract

Hydrogenation of the silicon/silicon oxide interface is shown to cause changes in every feature spectroscopically discernible by soft x-ray photoemission in addition to depinning the Fermi level. A new feature is observed to grow in at 3.6 eV with respect to bulk Si upon exposure to atomic hydrogen at the expense of interface states intermediate between 3.6 and 0 eV. Assignments of photoemission features are discussed in the context of previous model studies of the interface and issues of electronic versus chemical reversibility are discussed.

Original languageEnglish
Pages (from-to)1081
Number of pages1
JournalApplied Physics Letters
Publication statusPublished - 1995
Externally publishedYes

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photoelectric emission
fragments
silicon oxides
hydrogenation
causes
silicon
hydrogen
electronics
x rays

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Photoemission assignments of HxSiO4-x fragments at the Si/SiOx interface. / Lee, Sunghee; Banaszak Holl, Mark M.; Hung, Wei Hsiu; McFeely, F. R.

In: Applied Physics Letters, 1995, p. 1081.

Research output: Contribution to journalArticle

Lee, Sunghee ; Banaszak Holl, Mark M. ; Hung, Wei Hsiu ; McFeely, F. R. / Photoemission assignments of HxSiO4-x fragments at the Si/SiOx interface. In: Applied Physics Letters. 1995 ; pp. 1081.
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