Photoemission assignments of HxSiO4-x fragments at the Si/SiOx interface

Sunghee Lee, Mark M. Banaszak Holl, Wei Hsiu Hung, F. R. McFeely

Research output: Contribution to journalArticle

Abstract

Hydrogenation of the silicon/silicon oxide interface is shown to cause changes in every feature spectroscopically discernible by soft x-ray photoemission in addition to depinning the Fermi level. A new feature is observed to grow in at 3.6 eV with respect to bulk Si upon exposure to atomic hydrogen at the expense of interface states intermediate between 3.6 and 0 eV. Assignments of photoemission features are discussed in the context of previous model studies of the interface and issues of electronic versus chemical reversibility are discussed.

Original languageEnglish
Number of pages1
JournalApplied Physics Letters
Publication statusPublished - 1995 Dec 1

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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