Photoemission assignments of HxSiO4-x fragments at the Si/SiOx interface

Sunghee Lee, Mark M. Banaszak Holl, Wei Hsiu Hung, F. R. McFeely

Research output: Contribution to journalArticle

Abstract

Hydrogenation of the silicon/silicon oxide interface is shown to cause changes in every feature spectroscopically discernible by soft x-ray photoemission in addition to depinning the Fermi level. A new feature is observed to grow in at 3.6 eV with respect to bulk Si upon exposure to atomic hydrogen at the expense of interface states intermediate between 3.6 and 0 eV. Assignments of photoemission features are discussed in the context of previous model studies of the interface and issues of electronic versus chemical reversibility are discussed.

Original languageEnglish
Number of pages1
JournalApplied Physics Letters
Publication statusPublished - 1995 Dec 1

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photoelectric emission
fragments
silicon oxides
hydrogenation
causes
silicon
hydrogen
electronics
x rays

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Photoemission assignments of HxSiO4-x fragments at the Si/SiOx interface. / Lee, Sunghee; Banaszak Holl, Mark M.; Hung, Wei Hsiu; McFeely, F. R.

In: Applied Physics Letters, 01.12.1995.

Research output: Contribution to journalArticle

@article{89ffb384473345dab08e7bdf07d46b5f,
title = "Photoemission assignments of HxSiO4-x fragments at the Si/SiOx interface",
abstract = "Hydrogenation of the silicon/silicon oxide interface is shown to cause changes in every feature spectroscopically discernible by soft x-ray photoemission in addition to depinning the Fermi level. A new feature is observed to grow in at 3.6 eV with respect to bulk Si upon exposure to atomic hydrogen at the expense of interface states intermediate between 3.6 and 0 eV. Assignments of photoemission features are discussed in the context of previous model studies of the interface and issues of electronic versus chemical reversibility are discussed.",
author = "Sunghee Lee and {Banaszak Holl}, {Mark M.} and Hung, {Wei Hsiu} and McFeely, {F. R.}",
year = "1995",
month = "12",
day = "1",
language = "English",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",

}

TY - JOUR

T1 - Photoemission assignments of HxSiO4-x fragments at the Si/SiOx interface

AU - Lee, Sunghee

AU - Banaszak Holl, Mark M.

AU - Hung, Wei Hsiu

AU - McFeely, F. R.

PY - 1995/12/1

Y1 - 1995/12/1

N2 - Hydrogenation of the silicon/silicon oxide interface is shown to cause changes in every feature spectroscopically discernible by soft x-ray photoemission in addition to depinning the Fermi level. A new feature is observed to grow in at 3.6 eV with respect to bulk Si upon exposure to atomic hydrogen at the expense of interface states intermediate between 3.6 and 0 eV. Assignments of photoemission features are discussed in the context of previous model studies of the interface and issues of electronic versus chemical reversibility are discussed.

AB - Hydrogenation of the silicon/silicon oxide interface is shown to cause changes in every feature spectroscopically discernible by soft x-ray photoemission in addition to depinning the Fermi level. A new feature is observed to grow in at 3.6 eV with respect to bulk Si upon exposure to atomic hydrogen at the expense of interface states intermediate between 3.6 and 0 eV. Assignments of photoemission features are discussed in the context of previous model studies of the interface and issues of electronic versus chemical reversibility are discussed.

UR - http://www.scopus.com/inward/record.url?scp=36449007645&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36449007645&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:36449007645

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

ER -