Abstract
In a preliminary report, the authors described the photoelectrochemical production of fluorine from anhydrous hydrogen fluoride solutions using single-crystal TiO2 electrodes. It was found that fluorine doping substantially enhanced the stability of n-TiO2 photoelectrodes in HF/NaF. They now report a fuller characterization of these effects and a study of the energetics of the semiconductor/fluoride-containing solution interface by ac impedance techniques. This study reveals an extremely low density of midgap surface states, which allows the electrode to develop a large open circuit photovoltage and to evolve fluorine efficiently, and without substantial photoanodic corrosion, from anhydrous hydrogen fluoride solutions. This same low density of surface states, and a shift of the valence band-edge to more negative potentials, gives rise to a complete lack of photoactivity in fluoride-containing acetonitrile solutions.
Original language | English |
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Pages (from-to) | 423-428 |
Number of pages | 6 |
Journal | Journal of Physical Chemistry |
Volume | 94 |
Issue number | 1 |
Publication status | Published - 1990 Jan 1 |
Externally published | Yes |
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ASJC Scopus subject areas
- Engineering(all)
- Physical and Theoretical Chemistry
Cite this
Photoelectrochemistry and interfacial energetics of titanium dioxide photoelectrodes in fluoride-containing solutions. / Chong, Mou Wang; Mallouk, Thomas E.
In: Journal of Physical Chemistry, Vol. 94, No. 1, 01.01.1990, p. 423-428.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Photoelectrochemistry and interfacial energetics of titanium dioxide photoelectrodes in fluoride-containing solutions
AU - Chong, Mou Wang
AU - Mallouk, Thomas E.
PY - 1990/1/1
Y1 - 1990/1/1
N2 - In a preliminary report, the authors described the photoelectrochemical production of fluorine from anhydrous hydrogen fluoride solutions using single-crystal TiO2 electrodes. It was found that fluorine doping substantially enhanced the stability of n-TiO2 photoelectrodes in HF/NaF. They now report a fuller characterization of these effects and a study of the energetics of the semiconductor/fluoride-containing solution interface by ac impedance techniques. This study reveals an extremely low density of midgap surface states, which allows the electrode to develop a large open circuit photovoltage and to evolve fluorine efficiently, and without substantial photoanodic corrosion, from anhydrous hydrogen fluoride solutions. This same low density of surface states, and a shift of the valence band-edge to more negative potentials, gives rise to a complete lack of photoactivity in fluoride-containing acetonitrile solutions.
AB - In a preliminary report, the authors described the photoelectrochemical production of fluorine from anhydrous hydrogen fluoride solutions using single-crystal TiO2 electrodes. It was found that fluorine doping substantially enhanced the stability of n-TiO2 photoelectrodes in HF/NaF. They now report a fuller characterization of these effects and a study of the energetics of the semiconductor/fluoride-containing solution interface by ac impedance techniques. This study reveals an extremely low density of midgap surface states, which allows the electrode to develop a large open circuit photovoltage and to evolve fluorine efficiently, and without substantial photoanodic corrosion, from anhydrous hydrogen fluoride solutions. This same low density of surface states, and a shift of the valence band-edge to more negative potentials, gives rise to a complete lack of photoactivity in fluoride-containing acetonitrile solutions.
UR - http://www.scopus.com/inward/record.url?scp=0025247647&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0025247647&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0025247647
VL - 94
SP - 423
EP - 428
JO - Journal of Physical Chemistry
JF - Journal of Physical Chemistry
SN - 0022-3654
IS - 1
ER -