Photoelectrochemical etching of InxGa1-xN

J. M. Hwang; J. T. Hsieh; C. Y. Ko; H. L. Hwang; W. H. Hung

doi:10.1063/1.126820

Photoelectrochemical etching of In_xGa_1-xN

J. M. Hwang^*, J. T. Hsieh, C. Y. Ko, H. L. Hwang, W. H. Hung

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

Photoelectrochemical (PEC) etching of In_xGa_1-xN in the KOH solution under illumination of a Hg-arc lamp is studied. An indium oxide surface layer is formed during PEC etching, which slows down the etching rate. The PEC etch rate of In_xGa_1-xN is determined by dissolution of indium oxides into the solution. Increase of the solution temperature results in an increase of solubility of indium oxides and thus enhances the PEC etch rate. It is found that stirring the solution can accelerate indium oxides to dissolve into the solution and increase the etch rate. The thick indium oxide layer on the PEC-etched In_xGa_1-xN surface can be effectively removed by the treatment of using a hot 6N HCl solution. A post-treatment by using a 3.2 M KOH solution can provide a smooth sidewall on the PEC-etched surface for the potential application to laser cavity.

Original language	English
Pages (from-to)	3917-3919
Number of pages	3
Journal	Applied Physics Letters
Volume	76
Issue number	26
DOIs	https://doi.org/10.1063/1.126820
Publication status	Published - 2000 Jun 26
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.126820

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title = "Photoelectrochemical etching of InxGa1-xN",

abstract = "Photoelectrochemical (PEC) etching of InxGa1-xN in the KOH solution under illumination of a Hg-arc lamp is studied. An indium oxide surface layer is formed during PEC etching, which slows down the etching rate. The PEC etch rate of InxGa1-xN is determined by dissolution of indium oxides into the solution. Increase of the solution temperature results in an increase of solubility of indium oxides and thus enhances the PEC etch rate. It is found that stirring the solution can accelerate indium oxides to dissolve into the solution and increase the etch rate. The thick indium oxide layer on the PEC-etched InxGa1-xN surface can be effectively removed by the treatment of using a hot 6N HCl solution. A post-treatment by using a 3.2 M KOH solution can provide a smooth sidewall on the PEC-etched surface for the potential application to laser cavity.",

author = "Hwang, {J. M.} and Hsieh, {J. T.} and Ko, {C. Y.} and Hwang, {H. L.} and Hung, {W. H.}",

year = "2000",

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T1 - Photoelectrochemical etching of InxGa1-xN

AU - Hwang, J. M.

AU - Hsieh, J. T.

AU - Ko, C. Y.

AU - Hwang, H. L.

AU - Hung, W. H.

PY - 2000/6/26

Y1 - 2000/6/26

N2 - Photoelectrochemical (PEC) etching of InxGa1-xN in the KOH solution under illumination of a Hg-arc lamp is studied. An indium oxide surface layer is formed during PEC etching, which slows down the etching rate. The PEC etch rate of InxGa1-xN is determined by dissolution of indium oxides into the solution. Increase of the solution temperature results in an increase of solubility of indium oxides and thus enhances the PEC etch rate. It is found that stirring the solution can accelerate indium oxides to dissolve into the solution and increase the etch rate. The thick indium oxide layer on the PEC-etched InxGa1-xN surface can be effectively removed by the treatment of using a hot 6N HCl solution. A post-treatment by using a 3.2 M KOH solution can provide a smooth sidewall on the PEC-etched surface for the potential application to laser cavity.

AB - Photoelectrochemical (PEC) etching of InxGa1-xN in the KOH solution under illumination of a Hg-arc lamp is studied. An indium oxide surface layer is formed during PEC etching, which slows down the etching rate. The PEC etch rate of InxGa1-xN is determined by dissolution of indium oxides into the solution. Increase of the solution temperature results in an increase of solubility of indium oxides and thus enhances the PEC etch rate. It is found that stirring the solution can accelerate indium oxides to dissolve into the solution and increase the etch rate. The thick indium oxide layer on the PEC-etched InxGa1-xN surface can be effectively removed by the treatment of using a hot 6N HCl solution. A post-treatment by using a 3.2 M KOH solution can provide a smooth sidewall on the PEC-etched surface for the potential application to laser cavity.

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JF - Applied Physics Letters

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ER -

Photoelectrochemical etching of In_xGa_1-xN

Abstract

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