Photoelectrochemical etching of InxGa1-xN

J. M. Hwang, J. T. Hsieh, C. Y. Ko, H. L. Hwang, W. H. Hung

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Abstract

Photoelectrochemical (PEC) etching of InxGa1-xN in the KOH solution under illumination of a Hg-arc lamp is studied. An indium oxide surface layer is formed during PEC etching, which slows down the etching rate. The PEC etch rate of InxGa1-xN is determined by dissolution of indium oxides into the solution. Increase of the solution temperature results in an increase of solubility of indium oxides and thus enhances the PEC etch rate. It is found that stirring the solution can accelerate indium oxides to dissolve into the solution and increase the etch rate. The thick indium oxide layer on the PEC-etched InxGa1-xN surface can be effectively removed by the treatment of using a hot 6N HCl solution. A post-treatment by using a 3.2 M KOH solution can provide a smooth sidewall on the PEC-etched surface for the potential application to laser cavity.

Original languageEnglish
Pages (from-to)3917-3919
Number of pages3
JournalApplied Physics Letters
Volume76
Issue number26
DOIs
Publication statusPublished - 2000 Jun 26

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Hwang, J. M., Hsieh, J. T., Ko, C. Y., Hwang, H. L., & Hung, W. H. (2000). Photoelectrochemical etching of InxGa1-xN. Applied Physics Letters, 76(26), 3917-3919. https://doi.org/10.1063/1.126820