Photoelectrochemical etching of InxGa1-xN

J. M. Hwang, J. T. Hsieh, C. Y. Ko, H. L. Hwang, W. H. Hung

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Photoelectrochemical (PEC) etching of InxGa1-xN in the KOH solution under illumination of a Hg-arc lamp is studied. An indium oxide surface layer is formed during PEC etching, which slows down the etching rate. The PEC etch rate of InxGa1-xN is determined by dissolution of indium oxides into the solution. Increase of the solution temperature results in an increase of solubility of indium oxides and thus enhances the PEC etch rate. It is found that stirring the solution can accelerate indium oxides to dissolve into the solution and increase the etch rate. The thick indium oxide layer on the PEC-etched InxGa1-xN surface can be effectively removed by the treatment of using a hot 6N HCl solution. A post-treatment by using a 3.2 M KOH solution can provide a smooth sidewall on the PEC-etched surface for the potential application to laser cavity.

Original languageEnglish
Pages (from-to)3917-3919
Number of pages3
JournalApplied Physics Letters
Volume76
Issue number26
DOIs
Publication statusPublished - 2000 Jun 26

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etching
indium oxides
arc lamps
stirring
laser cavities
surface layers
dissolving
solubility
illumination
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Hwang, J. M., Hsieh, J. T., Ko, C. Y., Hwang, H. L., & Hung, W. H. (2000). Photoelectrochemical etching of InxGa1-xN. Applied Physics Letters, 76(26), 3917-3919. https://doi.org/10.1063/1.126820

Photoelectrochemical etching of InxGa1-xN. / Hwang, J. M.; Hsieh, J. T.; Ko, C. Y.; Hwang, H. L.; Hung, W. H.

In: Applied Physics Letters, Vol. 76, No. 26, 26.06.2000, p. 3917-3919.

Research output: Contribution to journalArticle

Hwang, JM, Hsieh, JT, Ko, CY, Hwang, HL & Hung, WH 2000, 'Photoelectrochemical etching of InxGa1-xN', Applied Physics Letters, vol. 76, no. 26, pp. 3917-3919. https://doi.org/10.1063/1.126820
Hwang JM, Hsieh JT, Ko CY, Hwang HL, Hung WH. Photoelectrochemical etching of InxGa1-xN. Applied Physics Letters. 2000 Jun 26;76(26):3917-3919. https://doi.org/10.1063/1.126820
Hwang, J. M. ; Hsieh, J. T. ; Ko, C. Y. ; Hwang, H. L. ; Hung, W. H. / Photoelectrochemical etching of InxGa1-xN. In: Applied Physics Letters. 2000 ; Vol. 76, No. 26. pp. 3917-3919.
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