Photodetector with artificial atoms of silicon

INIS

• atoms 100%
• quantum dots 100%
• silicon 100%
• photodetectors 100%
• interactions 50%
• applications 50%
• capture 50%
• detection 50%
• devices 50%
• temperature range 0273-0400 k 50%
• illumination 50%
• transistors 50%
• carriers 50%
• photocurrents 50%
• photons 50%
• quantum efficiency 50%
• i-v characteristic 50%

Physics

• Atoms 100%
• Quantum Dot 100%
• Silicon 100%
• Photometer 100%
• Room Temperature 50%
• Transistor 50%
• Photoelectric Emission 50%
• Photons 50%
• Luminous Intensity 50%