Photodetector with artificial atoms of silicon

Shu Fen Hu; Ting Wei Liao; Chao Yuan Huang

doi:10.1063/1.2771527

Photodetector with artificial atoms of silicon

Shu Fen Hu^*, Ting Wei Liao, Chao Yuan Huang

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

The authors demonstrate a potential application of quantum dots for the detection of photons, showing that the Coulomb interaction resulting from the capture of photoexcited carriers by quantum dots produces a detectable change in the source-drain resistance of the transistor. This quantum effect is more pronounced with higher illumination, displaying staircase quantum steps with ΔV=4 mV on the I-V characteristics at room temperature, implying that the photocurrent is increased as the light intensity is increased. The responsitivity of device is R∼3.98× 106 AW for Vd =0.18 V, and external quantum efficiency is more than 8.6%.

Original language	English
Article number	071125
Journal	Applied Physics Letters
Volume	91
Issue number	7
DOIs	https://doi.org/10.1063/1.2771527
Publication status	Published - 2007

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2771527

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@article{94889815da5448ad8d841968fcb449cd,

title = "Photodetector with artificial atoms of silicon",

abstract = "The authors demonstrate a potential application of quantum dots for the detection of photons, showing that the Coulomb interaction resulting from the capture of photoexcited carriers by quantum dots produces a detectable change in the source-drain resistance of the transistor. This quantum effect is more pronounced with higher illumination, displaying staircase quantum steps with ΔV=4 mV on the I-V characteristics at room temperature, implying that the photocurrent is increased as the light intensity is increased. The responsitivity of device is R∼3.98× 106 AW for Vd =0.18 V, and external quantum efficiency is more than 8.6%.",

author = "Hu, {Shu Fen} and Liao, {Ting Wei} and Huang, {Chao Yuan}",

note = "Funding Information: The authors gratefully acknowledge support of the National Science Council of Taiwan under Contract No. NSC95-2112-M-003-025. They are greatly indebted to the research staff at National Nano Device Laboratories (NDL) for providing much help.",

year = "2007",

doi = "10.1063/1.2771527",

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volume = "91",

journal = "Applied Physics Letters",

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T1 - Photodetector with artificial atoms of silicon

AU - Hu, Shu Fen

AU - Liao, Ting Wei

AU - Huang, Chao Yuan

N1 - Funding Information: The authors gratefully acknowledge support of the National Science Council of Taiwan under Contract No. NSC95-2112-M-003-025. They are greatly indebted to the research staff at National Nano Device Laboratories (NDL) for providing much help.

PY - 2007

Y1 - 2007

N2 - The authors demonstrate a potential application of quantum dots for the detection of photons, showing that the Coulomb interaction resulting from the capture of photoexcited carriers by quantum dots produces a detectable change in the source-drain resistance of the transistor. This quantum effect is more pronounced with higher illumination, displaying staircase quantum steps with ΔV=4 mV on the I-V characteristics at room temperature, implying that the photocurrent is increased as the light intensity is increased. The responsitivity of device is R∼3.98× 106 AW for Vd =0.18 V, and external quantum efficiency is more than 8.6%.

AB - The authors demonstrate a potential application of quantum dots for the detection of photons, showing that the Coulomb interaction resulting from the capture of photoexcited carriers by quantum dots produces a detectable change in the source-drain resistance of the transistor. This quantum effect is more pronounced with higher illumination, displaying staircase quantum steps with ΔV=4 mV on the I-V characteristics at room temperature, implying that the photocurrent is increased as the light intensity is increased. The responsitivity of device is R∼3.98× 106 AW for Vd =0.18 V, and external quantum efficiency is more than 8.6%.

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Photodetector with artificial atoms of silicon

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