Photodetector with artificial atoms of silicon

Shu Fen Hu, Ting Wei Liao, Chao Yuan Huang

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Abstract

The authors demonstrate a potential application of quantum dots for the detection of photons, showing that the Coulomb interaction resulting from the capture of photoexcited carriers by quantum dots produces a detectable change in the source-drain resistance of the transistor. This quantum effect is more pronounced with higher illumination, displaying staircase quantum steps with ΔV=4 mV on the I-V characteristics at room temperature, implying that the photocurrent is increased as the light intensity is increased. The responsitivity of device is R∼3.98× 106 AW for Vd =0.18 V, and external quantum efficiency is more than 8.6%.

Original languageEnglish
Article number071125
JournalApplied Physics Letters
Volume91
Issue number7
DOIs
Publication statusPublished - 2007 Aug 24

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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