Photoconductivity study of synthetic FeS2 single crystals at low temperatures

S. H. Chen, M. Y. Tsai, Y. S. Huang, J. T. Yu

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The photoconductivity measurements of synthetic pyrite FeS2 single crystals at low temperatures are used to study the impurity and defect-related photoresponse peaks below the band edge. At temperatures below 100 K, several features on the low-energy side of the photoconductivity spectra are observed. By comparison of the results with those of the absorption and the photo-EPR measurements, the origin of the sharpest peak at 0.866 eV is identified. The nature of other weaker features is discussed. The existence of these features prevents us from determining the band gap of FeS2 by the Moss rule at low temperature. We propose that the energy gap of FeS 2 at low temperatures may be determined by adding the thermal ionization energy of the shallow acceptor states to the photo-ionization energy between the (SCl)2- states and the bottom of the conduction band.

Original languageEnglish
Article number019
Pages (from-to)9211-9218
Number of pages8
JournalJournal of Physics: Condensed Matter
Volume6
Issue number43
DOIs
Publication statusPublished - 1994 Dec 1

Fingerprint

Photoconductivity
photoconductivity
Single crystals
Temperature
Ionization potential
single crystals
Bryophytes
Energy gap
pyrites
Bryophyta
Photoionization
energy
photoionization
Pyrites
conduction bands
Conduction bands
Paramagnetic resonance
ionization
impurities
Hot Temperature

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Photoconductivity study of synthetic FeS2 single crystals at low temperatures. / Chen, S. H.; Tsai, M. Y.; Huang, Y. S.; Yu, J. T.

In: Journal of Physics: Condensed Matter, Vol. 6, No. 43, 019, 01.12.1994, p. 9211-9218.

Research output: Contribution to journalArticle

Chen, S. H. ; Tsai, M. Y. ; Huang, Y. S. ; Yu, J. T. / Photoconductivity study of synthetic FeS2 single crystals at low temperatures. In: Journal of Physics: Condensed Matter. 1994 ; Vol. 6, No. 43. pp. 9211-9218.
@article{d3b435371c6f48d68e466b850d00f320,
title = "Photoconductivity study of synthetic FeS2 single crystals at low temperatures",
abstract = "The photoconductivity measurements of synthetic pyrite FeS2 single crystals at low temperatures are used to study the impurity and defect-related photoresponse peaks below the band edge. At temperatures below 100 K, several features on the low-energy side of the photoconductivity spectra are observed. By comparison of the results with those of the absorption and the photo-EPR measurements, the origin of the sharpest peak at 0.866 eV is identified. The nature of other weaker features is discussed. The existence of these features prevents us from determining the band gap of FeS2 by the Moss rule at low temperature. We propose that the energy gap of FeS 2 at low temperatures may be determined by adding the thermal ionization energy of the shallow acceptor states to the photo-ionization energy between the (SCl)2- states and the bottom of the conduction band.",
author = "Chen, {S. H.} and Tsai, {M. Y.} and Huang, {Y. S.} and Yu, {J. T.}",
year = "1994",
month = "12",
day = "1",
doi = "10.1088/0953-8984/6/43/019",
language = "English",
volume = "6",
pages = "9211--9218",
journal = "Journal of Physics Condensed Matter",
issn = "0953-8984",
publisher = "IOP Publishing Ltd.",
number = "43",

}

TY - JOUR

T1 - Photoconductivity study of synthetic FeS2 single crystals at low temperatures

AU - Chen, S. H.

AU - Tsai, M. Y.

AU - Huang, Y. S.

AU - Yu, J. T.

PY - 1994/12/1

Y1 - 1994/12/1

N2 - The photoconductivity measurements of synthetic pyrite FeS2 single crystals at low temperatures are used to study the impurity and defect-related photoresponse peaks below the band edge. At temperatures below 100 K, several features on the low-energy side of the photoconductivity spectra are observed. By comparison of the results with those of the absorption and the photo-EPR measurements, the origin of the sharpest peak at 0.866 eV is identified. The nature of other weaker features is discussed. The existence of these features prevents us from determining the band gap of FeS2 by the Moss rule at low temperature. We propose that the energy gap of FeS 2 at low temperatures may be determined by adding the thermal ionization energy of the shallow acceptor states to the photo-ionization energy between the (SCl)2- states and the bottom of the conduction band.

AB - The photoconductivity measurements of synthetic pyrite FeS2 single crystals at low temperatures are used to study the impurity and defect-related photoresponse peaks below the band edge. At temperatures below 100 K, several features on the low-energy side of the photoconductivity spectra are observed. By comparison of the results with those of the absorption and the photo-EPR measurements, the origin of the sharpest peak at 0.866 eV is identified. The nature of other weaker features is discussed. The existence of these features prevents us from determining the band gap of FeS2 by the Moss rule at low temperature. We propose that the energy gap of FeS 2 at low temperatures may be determined by adding the thermal ionization energy of the shallow acceptor states to the photo-ionization energy between the (SCl)2- states and the bottom of the conduction band.

UR - http://www.scopus.com/inward/record.url?scp=0028526825&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028526825&partnerID=8YFLogxK

U2 - 10.1088/0953-8984/6/43/019

DO - 10.1088/0953-8984/6/43/019

M3 - Article

AN - SCOPUS:0028526825

VL - 6

SP - 9211

EP - 9218

JO - Journal of Physics Condensed Matter

JF - Journal of Physics Condensed Matter

SN - 0953-8984

IS - 43

M1 - 019

ER -