Photocatalytic Activity and Mechanical Performance of O and N Co-doped TiO2 Thin Films

Weimin Tang, Chih Chung Hu, Chung Chen Tsao, Chun Sheng Chen, L. Selva Roselin, Chin Guo Kuo*, Chun Yao Hsu*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

Amorphous TiO2 films were deposited on non-alkali glass by reactive radio-frequency magnetron sputtering using a TiO2 ceramic target. This study analyzed the effects of Ar/O2/N2 gas flow ratios, deposition time, and thermal annealing treatments on the morphological and structural phases and photocatalytic characteristics of the TiO2 films. The XRD results showed a broad hump shape, indicating the existence of an amorphous phase characteristic of TiO2 films. For O2/N2 co-doped TiO2 films, as the O2 and N2 concentration increased, higher photocatalytic activity of TiO2 materials was obtained, while the film growth rate and band gap energy (Eg) values tended to decrease. When increasing the TiO2 film thickness, the amorphous phases remained unchanged, the Eg value narrowed, and higher photocatalytic activity was obtained. After thermal annealing treatments, the TiO2 films showed ultra-hydrophilicity and outstanding photocatalytic efficiency. The TiO2 film annealed at 450°C displayed higher photocatalytic performance and improved mechanical properties. It was seen that when using a higher nanoindentation load, higher hardness (H) and elastic modulus (E) were obtained, but the H/E, H3/E2, and elastic recovery rate (%Re) did not change significantly. Graphical Abstract: [Figure not available: see fulltext.].

Original languageEnglish
Pages (from-to)6145-6159
Number of pages15
JournalJournal of Electronic Materials
Volume51
Issue number11
DOIs
Publication statusPublished - 2022 Nov

Keywords

  • Amorphous TiO
  • annealing
  • co-doped TiO
  • photocatalytic characteristics

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

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