Photocapacitive effect of ferroelectric hafnium-zirconate capacitor structure

Guan Lin Liou, Chun Hu Cheng, Yu Chien Chiu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this work, we investigated the photocapacitive effect of the metal-ferroelectric-insulator-semiconductor capacitors under illumination. The photocapacitive effect is mainly caused by light photon excitation, contributed from the variation of depletion charge. We suggested that the ferroelectric domains are affected by defect dipole charges formed by the interface trapped charges to lead to the variation of depletion capacitance.

Original languageEnglish
Title of host publicationEDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-2
Number of pages2
ISBN (Electronic)9781538629079
DOIs
Publication statusPublished - 2017 Dec 1
Event13th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2017 - Hsinchu, Taiwan
Duration: 2017 Oct 182017 Oct 20

Publication series

NameEDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits
Volume2017-January

Conference

Conference13th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2017
CountryTaiwan
CityHsinchu
Period17/10/1817/10/20

Keywords

  • Ferroelectric
  • Hafnium-zirconate
  • Photocapacitive effect

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Hardware and Architecture
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Photocapacitive effect of ferroelectric hafnium-zirconate capacitor structure'. Together they form a unique fingerprint.

  • Cite this

    Liou, G. L., Cheng, C. H., & Chiu, Y. C. (2017). Photocapacitive effect of ferroelectric hafnium-zirconate capacitor structure. In EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits (pp. 1-2). (EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits; Vol. 2017-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDSSC.2017.8126507