Photocapacitive effect of ferroelectric hafnium-zirconate capacitor structure

Guan Lin Liou, Chun Hu Cheng, Yu Chien Chiu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this work, we investigated the photocapacitive effect of the metal-ferroelectric-insulator-semiconductor capacitors under illumination. The photocapacitive effect is mainly caused by light photon excitation, contributed from the variation of depletion charge. We suggested that the ferroelectric domains are affected by defect dipole charges formed by the interface trapped charges to lead to the variation of depletion capacitance.

Original languageEnglish
Title of host publicationEDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-2
Number of pages2
ISBN (Electronic)9781538629079
DOIs
Publication statusPublished - 2017 Dec 1
Event13th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2017 - Hsinchu, Taiwan
Duration: 2017 Oct 182017 Oct 20

Publication series

NameEDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits
Volume2017-January

Conference

Conference13th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2017
CountryTaiwan
CityHsinchu
Period17/10/1817/10/20

Fingerprint

Hafnium
Ferroelectric materials
Capacitors
Capacitance
Photons
Lighting
Metals
Semiconductor materials
Defects

Keywords

  • Ferroelectric
  • Hafnium-zirconate
  • Photocapacitive effect

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Liou, G. L., Cheng, C. H., & Chiu, Y. C. (2017). Photocapacitive effect of ferroelectric hafnium-zirconate capacitor structure. In EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits (pp. 1-2). (EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits; Vol. 2017-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDSSC.2017.8126507

Photocapacitive effect of ferroelectric hafnium-zirconate capacitor structure. / Liou, Guan Lin; Cheng, Chun Hu; Chiu, Yu Chien.

EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits. Institute of Electrical and Electronics Engineers Inc., 2017. p. 1-2 (EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits; Vol. 2017-January).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Liou, GL, Cheng, CH & Chiu, YC 2017, Photocapacitive effect of ferroelectric hafnium-zirconate capacitor structure. in EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits. EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits, vol. 2017-January, Institute of Electrical and Electronics Engineers Inc., pp. 1-2, 13th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2017, Hsinchu, Taiwan, 17/10/18. https://doi.org/10.1109/EDSSC.2017.8126507
Liou GL, Cheng CH, Chiu YC. Photocapacitive effect of ferroelectric hafnium-zirconate capacitor structure. In EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits. Institute of Electrical and Electronics Engineers Inc. 2017. p. 1-2. (EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits). https://doi.org/10.1109/EDSSC.2017.8126507
Liou, Guan Lin ; Cheng, Chun Hu ; Chiu, Yu Chien. / Photocapacitive effect of ferroelectric hafnium-zirconate capacitor structure. EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 1-2 (EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits).
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