Photoabsorption study of the electronic structures of Ni3Al, Ni3Ga, Ni3In, and Ni13In9

Li Shing Hsu*, Y. K. Wang, Y. L. Tai, J. F. Lee

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

X-ray absorption near-edge spectroscopy (XANES) spectra at the Ni K-, In L3-, and In K-edge of Ni3In and Ni13In 9 are presented and compared with theoretical XANES spectra and site- and momentum-decomposed partial density of states derived from first-principles calculation. The agreement between theory and experiment is better for Ni 3In than for Ni13In9. Extended X-ray absorption fine structure spectra of Ni3Al, Ni3Ga, Ni3In, and Ni13In9 are also analyzed to yield the bonding parameters.

Original languageEnglish
Pages (from-to)11-16
Number of pages6
JournalJournal of Alloys and Compounds
Volume413
Issue number1-2
DOIs
Publication statusPublished - 2006 Mar 9
Externally publishedYes

Keywords

  • Electronic structure
  • Ni-In compounds
  • Photoabsorption

ASJC Scopus subject areas

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

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