Phenomena of n-type metal-oxide-semiconductor-field-effect-transistors with contact etch stop layer stressor for different channel lengths

H. W. Hsu, K. C. Lin, C. C. Lee, Ming-Jenq Twu, H. S. Huang, S. Y. Chen, M. R. Peng, H. H. Teng, Chuan-Hsi Liu

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