INIS
gallium nitrides
100%
photoluminescence
100%
doped materials
100%
chemical vapor deposition
100%
data
66%
resolution
66%
ions
66%
films
66%
x-ray diffraction
66%
mass spectrometry
66%
concentration
33%
distribution
33%
power
33%
emission
33%
interfaces
33%
sapphire
33%
thin films
33%
indium
33%
excitation
33%
Material Science
Photoluminescence
100%
Chemical Vapor Deposition
100%
High Resolution X-Ray Diffraction
66%
Secondary Ion Mass Spectrometry
66%
Sapphire
33%
Thin Films
33%
Indium
33%
Chemistry
Phase Separation
100%
Metallorganic Chemical Vapor Deposition
100%
Photoluminescence
42%
Liquid Film
42%
Secondary Ion Mass Spectroscopy
28%
Concentration
14%