Phase separation in Zn-doped InGaN grown by metalorganic chemical vapor deposition

Z. C. Feng; T. R. Yang; R. Liu; T. S.A. Wee

doi:10.1016/S1369-8001(02)00056-2

Phase separation in Zn-doped InGaN grown by metalorganic chemical vapor deposition

Z. C. Feng^*, T. R. Yang, R. Liu, T. S.A. Wee

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Zn-doped InGaN thin films were deposited on GaN/sapphire by metalorganic chemical vapor deposition, and studied by a combination of high-resolution X-ray diffraction (HR-XRD), micro-photoluminescence (PL) and secondary ion mass spectrometry (SIMS). Indium phase separation is studied comparatively. HR-XRD exhibits a GaN band and a single band from InGaN for samples without phase separation, but two InGaN bands corresponding to different x(In) for samples with phase separation. PL excitation power dependence measurements reveal 2 sets of InGaN PL emissions for samples with phase separation, but only 1 set for samples without phase separation. SIMS data showed that phase separated InGaN:Zn films possess a high Zn concentration near the InGaN-GaN interface and non-uniform distributions of In and Zn contents, which are in contrast with data from InGaN:Zn films with no In-phase separation.

Original language	English
Pages (from-to)	39-43
Number of pages	5
Journal	Materials Science in Semiconductor Processing
Volume	5
Issue number	1
DOIs	https://doi.org/10.1016/S1369-8001(02)00056-2
Publication status	Published - 2002 Feb

Keywords

InGaN
MOCVD
Phase separation

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/S1369-8001(02)00056-2

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title = "Phase separation in Zn-doped InGaN grown by metalorganic chemical vapor deposition",

abstract = "Zn-doped InGaN thin films were deposited on GaN/sapphire by metalorganic chemical vapor deposition, and studied by a combination of high-resolution X-ray diffraction (HR-XRD), micro-photoluminescence (PL) and secondary ion mass spectrometry (SIMS). Indium phase separation is studied comparatively. HR-XRD exhibits a GaN band and a single band from InGaN for samples without phase separation, but two InGaN bands corresponding to different x(In) for samples with phase separation. PL excitation power dependence measurements reveal 2 sets of InGaN PL emissions for samples with phase separation, but only 1 set for samples without phase separation. SIMS data showed that phase separated InGaN:Zn films possess a high Zn concentration near the InGaN-GaN interface and non-uniform distributions of In and Zn contents, which are in contrast with data from InGaN:Zn films with no In-phase separation.",

keywords = "InGaN, MOCVD, Phase separation",

author = "Feng, {Z. C.} and Yang, {T. R.} and R. Liu and Wee, {T. S.A.}",

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T1 - Phase separation in Zn-doped InGaN grown by metalorganic chemical vapor deposition

AU - Feng, Z. C.

AU - Yang, T. R.

AU - Liu, R.

AU - Wee, T. S.A.

PY - 2002/2

Y1 - 2002/2

N2 - Zn-doped InGaN thin films were deposited on GaN/sapphire by metalorganic chemical vapor deposition, and studied by a combination of high-resolution X-ray diffraction (HR-XRD), micro-photoluminescence (PL) and secondary ion mass spectrometry (SIMS). Indium phase separation is studied comparatively. HR-XRD exhibits a GaN band and a single band from InGaN for samples without phase separation, but two InGaN bands corresponding to different x(In) for samples with phase separation. PL excitation power dependence measurements reveal 2 sets of InGaN PL emissions for samples with phase separation, but only 1 set for samples without phase separation. SIMS data showed that phase separated InGaN:Zn films possess a high Zn concentration near the InGaN-GaN interface and non-uniform distributions of In and Zn contents, which are in contrast with data from InGaN:Zn films with no In-phase separation.

AB - Zn-doped InGaN thin films were deposited on GaN/sapphire by metalorganic chemical vapor deposition, and studied by a combination of high-resolution X-ray diffraction (HR-XRD), micro-photoluminescence (PL) and secondary ion mass spectrometry (SIMS). Indium phase separation is studied comparatively. HR-XRD exhibits a GaN band and a single band from InGaN for samples without phase separation, but two InGaN bands corresponding to different x(In) for samples with phase separation. PL excitation power dependence measurements reveal 2 sets of InGaN PL emissions for samples with phase separation, but only 1 set for samples without phase separation. SIMS data showed that phase separated InGaN:Zn films possess a high Zn concentration near the InGaN-GaN interface and non-uniform distributions of In and Zn contents, which are in contrast with data from InGaN:Zn films with no In-phase separation.

KW - InGaN

KW - MOCVD

KW - Phase separation

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JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

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ER -

Phase separation in Zn-doped InGaN grown by metalorganic chemical vapor deposition

Abstract

Keywords

ASJC Scopus subject areas

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