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Persistent photoconductivity in InGaN/GaN multiquantum wells
H. C. Yang
*
, T. Y. Lin, Y. F. Chen
*
Corresponding author for this work
Undergraduate Program of Electro-Optical Engineering
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peer-review
35
Citations (Scopus)
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INIS
fluctuations
100%
gallium nitrides
100%
photoluminescence
100%
quantum wells
100%
photoconductivity
100%
layers
50%
piezoelectricity
50%
comparative evaluations
25%
depth
25%
decay
25%
absorption
25%
kinetics
25%
excitation
25%
optical properties
25%
stark effect
25%
Physics
Variations
100%
Photoluminescence
100%
Photoconductivity
100%
Piezoelectricity
50%
Kinetics
25%
Position (Location)
25%
Optical Properties
25%
Stark Effect
25%
Material Science
Photoluminescence
100%
Photoconductivity
100%
Piezoelectricity
50%
Optical Property
25%
Engineering
Stokes Shift
50%
Chemistry
Quantum-Confined Stark Effect
25%