Persistent photoconductivity in InGaN/GaN multiquantum wells

H. C. Yang; T. Y. Lin; Y. F. Chen

doi:10.1063/1.1340000

Persistent photoconductivity in InGaN/GaN multiquantum wells

H. C. Yang^*, T. Y. Lin, Y. F. Chen

^*Corresponding author for this work

Undergraduate Program of Electro-Optical Engineering

Research output: Contribution to journal › Article › peer-review

35 Citations (Scopus)

Abstract

Optical properties of undoped InGaN/GaN multiquantum wells (MQWs) have been investigated by photoconductivity, photoluminescence, and photoluminescence excitation measurements. We report the observation of persistent photoconductivity (PPC) in InGaN/GaN MQWs and show that the PPC effect arises from In composition fluctuations in the InGaN well layer. From the analysis of the decay kinetics, the localization depth caused by composition fluctuations has been determined. Compared with the results of complementary absorption and photoluminescence measurements, it is found that the quantum-confined Stark effect due to piezoelectric field and composition fluctuations both exist in the InGaN/GaN MQWs. These two effects are responsible for the photoluminescence Stokes' shift in the InGaN well layers. Here, we provide a unique way to distinguish the individual contribution to the Stokes' shift for the piezoelectric field and composition fluctuations.

Original language	English
Pages (from-to)	338-340
Number of pages	3
Journal	Applied Physics Letters
Volume	78
Issue number	3
DOIs	https://doi.org/10.1063/1.1340000
Publication status	Published - 2001 Jan 15

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Persistent photoconductivity in InGaN/GaN multiquantum wells",

abstract = "Optical properties of undoped InGaN/GaN multiquantum wells (MQWs) have been investigated by photoconductivity, photoluminescence, and photoluminescence excitation measurements. We report the observation of persistent photoconductivity (PPC) in InGaN/GaN MQWs and show that the PPC effect arises from In composition fluctuations in the InGaN well layer. From the analysis of the decay kinetics, the localization depth caused by composition fluctuations has been determined. Compared with the results of complementary absorption and photoluminescence measurements, it is found that the quantum-confined Stark effect due to piezoelectric field and composition fluctuations both exist in the InGaN/GaN MQWs. These two effects are responsible for the photoluminescence Stokes' shift in the InGaN well layers. Here, we provide a unique way to distinguish the individual contribution to the Stokes' shift for the piezoelectric field and composition fluctuations.",

author = "Yang, {H. C.} and Lin, {T. Y.} and Chen, {Y. F.}",

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T1 - Persistent photoconductivity in InGaN/GaN multiquantum wells

AU - Yang, H. C.

AU - Lin, T. Y.

AU - Chen, Y. F.

PY - 2001/1/15

Y1 - 2001/1/15

N2 - Optical properties of undoped InGaN/GaN multiquantum wells (MQWs) have been investigated by photoconductivity, photoluminescence, and photoluminescence excitation measurements. We report the observation of persistent photoconductivity (PPC) in InGaN/GaN MQWs and show that the PPC effect arises from In composition fluctuations in the InGaN well layer. From the analysis of the decay kinetics, the localization depth caused by composition fluctuations has been determined. Compared with the results of complementary absorption and photoluminescence measurements, it is found that the quantum-confined Stark effect due to piezoelectric field and composition fluctuations both exist in the InGaN/GaN MQWs. These two effects are responsible for the photoluminescence Stokes' shift in the InGaN well layers. Here, we provide a unique way to distinguish the individual contribution to the Stokes' shift for the piezoelectric field and composition fluctuations.

AB - Optical properties of undoped InGaN/GaN multiquantum wells (MQWs) have been investigated by photoconductivity, photoluminescence, and photoluminescence excitation measurements. We report the observation of persistent photoconductivity (PPC) in InGaN/GaN MQWs and show that the PPC effect arises from In composition fluctuations in the InGaN well layer. From the analysis of the decay kinetics, the localization depth caused by composition fluctuations has been determined. Compared with the results of complementary absorption and photoluminescence measurements, it is found that the quantum-confined Stark effect due to piezoelectric field and composition fluctuations both exist in the InGaN/GaN MQWs. These two effects are responsible for the photoluminescence Stokes' shift in the InGaN well layers. Here, we provide a unique way to distinguish the individual contribution to the Stokes' shift for the piezoelectric field and composition fluctuations.

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Persistent photoconductivity in InGaN/GaN multiquantum wells

Abstract

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