Performance investigation of hafnium-oxide negative capacitance transistor with remote nitrogen plasma treatment

Zhong Ying Huang; Hsuan Han Chen; Ruo Yin Liao; Hsiao Hsuan Hsu; Kuan Hsiang Lin; Wei Ting Chen; Shih Hao Lin; Ching Chien Huang; Wu Ching Chou; Chun Hu Cheng

doi:10.1016/j.tsf.2022.139345

Performance investigation of hafnium-oxide negative capacitance transistor with remote nitrogen plasma treatment

Zhong Ying Huang, Hsuan Han Chen, Ruo Yin Liao, Hsiao Hsuan Hsu^*, Kuan Hsiang Lin, Wei Ting Chen, Shih Hao Lin, Ching Chien Huang, Wu Ching Chou, Chun Hu Cheng

^*Corresponding author for this work

Department of Mechatronic Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

In this study, we demonstrated the hafnium-oxide negative capacitance transistors using different nitrogen plasma treatments. According to our experimental results, the electrical performance and negative capacitance switch characteristics were also affected by process temperature and ferroelectric/non-ferroelectric crystalline phases in addition to nitrogen species. The transistor device using optimal nitrogen plasma treatment exhibited the excellent performances, including a low off-state current (I_OFF) of ∼10⁻¹³ A/μm, a large on/off-state current ratio (I_ON/I_OFF) of 10⁷ and a steep subthreshold swing (SS) of sub-60 mV/decade with tight switching uniformity under a gate overdrive voltage of 2 V. These experimental results confirm that the negative capacitance transistor adopting hafnium oxide can be further improved by nitrogen species incorporation, which give a promising guidance for the next-generation low-power electronics.

Original language	English
Article number	139345
Journal	Thin Solid Films
Volume	755
DOIs	https://doi.org/10.1016/j.tsf.2022.139345
Publication status	Published - 2022 Aug 1

Keywords

Ferroelectric
Hafnium oxide
Nitrogen plasma treatment
Orthorhombic

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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@article{3f91696b9619420899fd576f2b0c663d,

title = "Performance investigation of hafnium-oxide negative capacitance transistor with remote nitrogen plasma treatment",

abstract = "In this study, we demonstrated the hafnium-oxide negative capacitance transistors using different nitrogen plasma treatments. According to our experimental results, the electrical performance and negative capacitance switch characteristics were also affected by process temperature and ferroelectric/non-ferroelectric crystalline phases in addition to nitrogen species. The transistor device using optimal nitrogen plasma treatment exhibited the excellent performances, including a low off-state current (IOFF) of ∼10−13 A/μm, a large on/off-state current ratio (ION/IOFF) of 107 and a steep subthreshold swing (SS) of sub-60 mV/decade with tight switching uniformity under a gate overdrive voltage of 2 V. These experimental results confirm that the negative capacitance transistor adopting hafnium oxide can be further improved by nitrogen species incorporation, which give a promising guidance for the next-generation low-power electronics.",

keywords = "Ferroelectric, Hafnium oxide, Nitrogen plasma treatment, Orthorhombic",

author = "Huang, {Zhong Ying} and Chen, {Hsuan Han} and Liao, {Ruo Yin} and Hsu, {Hsiao Hsuan} and Lin, {Kuan Hsiang} and Chen, {Wei Ting} and Lin, {Shih Hao} and Huang, {Ching Chien} and Chou, {Wu Ching} and Cheng, {Chun Hu}",

note = "Publisher Copyright: {\textcopyright} 2022 Elsevier B.V.",

year = "2022",

month = aug,

day = "1",

doi = "10.1016/j.tsf.2022.139345",

language = "English",

volume = "755",

journal = "Thin Solid Films",

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TY - JOUR

T1 - Performance investigation of hafnium-oxide negative capacitance transistor with remote nitrogen plasma treatment

AU - Huang, Zhong Ying

AU - Chen, Hsuan Han

AU - Liao, Ruo Yin

AU - Hsu, Hsiao Hsuan

AU - Lin, Kuan Hsiang

AU - Chen, Wei Ting

AU - Lin, Shih Hao

AU - Huang, Ching Chien

AU - Chou, Wu Ching

AU - Cheng, Chun Hu

PY - 2022/8/1

Y1 - 2022/8/1

N2 - In this study, we demonstrated the hafnium-oxide negative capacitance transistors using different nitrogen plasma treatments. According to our experimental results, the electrical performance and negative capacitance switch characteristics were also affected by process temperature and ferroelectric/non-ferroelectric crystalline phases in addition to nitrogen species. The transistor device using optimal nitrogen plasma treatment exhibited the excellent performances, including a low off-state current (IOFF) of ∼10−13 A/μm, a large on/off-state current ratio (ION/IOFF) of 107 and a steep subthreshold swing (SS) of sub-60 mV/decade with tight switching uniformity under a gate overdrive voltage of 2 V. These experimental results confirm that the negative capacitance transistor adopting hafnium oxide can be further improved by nitrogen species incorporation, which give a promising guidance for the next-generation low-power electronics.

AB - In this study, we demonstrated the hafnium-oxide negative capacitance transistors using different nitrogen plasma treatments. According to our experimental results, the electrical performance and negative capacitance switch characteristics were also affected by process temperature and ferroelectric/non-ferroelectric crystalline phases in addition to nitrogen species. The transistor device using optimal nitrogen plasma treatment exhibited the excellent performances, including a low off-state current (IOFF) of ∼10−13 A/μm, a large on/off-state current ratio (ION/IOFF) of 107 and a steep subthreshold swing (SS) of sub-60 mV/decade with tight switching uniformity under a gate overdrive voltage of 2 V. These experimental results confirm that the negative capacitance transistor adopting hafnium oxide can be further improved by nitrogen species incorporation, which give a promising guidance for the next-generation low-power electronics.

KW - Ferroelectric

KW - Hafnium oxide

KW - Nitrogen plasma treatment

KW - Orthorhombic

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JO - Thin Solid Films

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Performance investigation of hafnium-oxide negative capacitance transistor with remote nitrogen plasma treatment

Abstract

Keywords

ASJC Scopus subject areas

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