Performance Investigation of an n-Type Tin-Oxide Thin Film Transistor by Channel Plasma Processing

Z. W. Shang; J. Ma; W. D. Liu; Y. C. Fan; H. H. Hsu; Z. W. Zheng; C. H. Cheng

doi:10.1109/JEDS.2020.2986172

Performance Investigation of an n-Type Tin-Oxide Thin Film Transistor by Channel Plasma Processing

Z. W. Shang, J. Ma, W. D. Liu, Y. C. Fan, H. H. Hsu^*, Z. W. Zheng, C. H. Cheng

^*Corresponding author for this work

Department of Mechatronic Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

In this paper, we investigated the performance of an n-type tin-oxide (SnO_x) thin film transistor (TFT) by experiments and simulation. The fabricated SnO_x TFT device by oxygen plasma treatment on the channel exhibited n-type conduction with an on/off current ratio of 4.4x10⁴, a high field-effect mobility of 18.5 cm²/V.s and a threshold swing of 405 mV/decade, which could be attributed to the excess reacted oxygen incorporated to the channel to form the oxygen-rich n-type SnO_x. Furthermore, a TCAD simulation based on the n-type SnO_x TFT device was performed by fitting the experimental data to investigate the effect of the channel traps on the device performance, indicating that performance enhancements were further achieved by suppressing the density of channel traps. In addition, the n-type SnO_x TFT device exhibited high stability upon illumination with visible light. The results show that the n-type SnO_x TFT device by channel plasma processing has considerable potential for next-generation high-performance display application.

Original language	English
Article number	9060932
Pages (from-to)	485-489
Number of pages	5
Journal	IEEE Journal of the Electron Devices Society
Volume	8
DOIs	https://doi.org/10.1109/JEDS.2020.2986172
Publication status	Published - 2020

Keywords

TCAD
Thin film transistor (TFT)
plasma
tin-oxide (SnO)

ASJC Scopus subject areas

Biotechnology
Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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@article{943cdaf3746c41c0a82eb39ec8e16728,

title = "Performance Investigation of an n-Type Tin-Oxide Thin Film Transistor by Channel Plasma Processing",

abstract = "In this paper, we investigated the performance of an n-type tin-oxide (SnOx) thin film transistor (TFT) by experiments and simulation. The fabricated SnOx TFT device by oxygen plasma treatment on the channel exhibited n-type conduction with an on/off current ratio of 4.4x104, a high field-effect mobility of 18.5 cm2/V.s and a threshold swing of 405 mV/decade, which could be attributed to the excess reacted oxygen incorporated to the channel to form the oxygen-rich n-type SnOx. Furthermore, a TCAD simulation based on the n-type SnOx TFT device was performed by fitting the experimental data to investigate the effect of the channel traps on the device performance, indicating that performance enhancements were further achieved by suppressing the density of channel traps. In addition, the n-type SnOx TFT device exhibited high stability upon illumination with visible light. The results show that the n-type SnOx TFT device by channel plasma processing has considerable potential for next-generation high-performance display application.",

keywords = "TCAD, Thin film transistor (TFT), plasma, tin-oxide (SnO)",

author = "Shang, {Z. W.} and J. Ma and Liu, {W. D.} and Fan, {Y. C.} and Hsu, {H. H.} and Zheng, {Z. W.} and Cheng, {C. H.}",

note = "Publisher Copyright: {\textcopyright} 2013 IEEE.",

year = "2020",

doi = "10.1109/JEDS.2020.2986172",

language = "English",

volume = "8",

pages = "485--489",

journal = "IEEE Journal of the Electron Devices Society",

issn = "2168-6734",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - Performance Investigation of an n-Type Tin-Oxide Thin Film Transistor by Channel Plasma Processing

AU - Shang, Z. W.

AU - Ma, J.

AU - Liu, W. D.

AU - Fan, Y. C.

AU - Hsu, H. H.

AU - Zheng, Z. W.

AU - Cheng, C. H.

PY - 2020

Y1 - 2020

N2 - In this paper, we investigated the performance of an n-type tin-oxide (SnOx) thin film transistor (TFT) by experiments and simulation. The fabricated SnOx TFT device by oxygen plasma treatment on the channel exhibited n-type conduction with an on/off current ratio of 4.4x104, a high field-effect mobility of 18.5 cm2/V.s and a threshold swing of 405 mV/decade, which could be attributed to the excess reacted oxygen incorporated to the channel to form the oxygen-rich n-type SnOx. Furthermore, a TCAD simulation based on the n-type SnOx TFT device was performed by fitting the experimental data to investigate the effect of the channel traps on the device performance, indicating that performance enhancements were further achieved by suppressing the density of channel traps. In addition, the n-type SnOx TFT device exhibited high stability upon illumination with visible light. The results show that the n-type SnOx TFT device by channel plasma processing has considerable potential for next-generation high-performance display application.

AB - In this paper, we investigated the performance of an n-type tin-oxide (SnOx) thin film transistor (TFT) by experiments and simulation. The fabricated SnOx TFT device by oxygen plasma treatment on the channel exhibited n-type conduction with an on/off current ratio of 4.4x104, a high field-effect mobility of 18.5 cm2/V.s and a threshold swing of 405 mV/decade, which could be attributed to the excess reacted oxygen incorporated to the channel to form the oxygen-rich n-type SnOx. Furthermore, a TCAD simulation based on the n-type SnOx TFT device was performed by fitting the experimental data to investigate the effect of the channel traps on the device performance, indicating that performance enhancements were further achieved by suppressing the density of channel traps. In addition, the n-type SnOx TFT device exhibited high stability upon illumination with visible light. The results show that the n-type SnOx TFT device by channel plasma processing has considerable potential for next-generation high-performance display application.

KW - TCAD

KW - Thin film transistor (TFT)

KW - plasma

KW - tin-oxide (SnO)

UR - http://www.scopus.com/inward/record.url?scp=85084926849&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85084926849&partnerID=8YFLogxK

U2 - 10.1109/JEDS.2020.2986172

DO - 10.1109/JEDS.2020.2986172

M3 - Article

AN - SCOPUS:85084926849

SN - 2168-6734

VL - 8

SP - 485

EP - 489

JO - IEEE Journal of the Electron Devices Society

JF - IEEE Journal of the Electron Devices Society

M1 - 9060932

ER -

Performance Investigation of an n-Type Tin-Oxide Thin Film Transistor by Channel Plasma Processing

Abstract

Keywords

ASJC Scopus subject areas

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