Performance improvement of metal-insulator-metal capacitors using postmetallization-annealed treatment on the Al2O3/TiO 2/Al2O3 film

Chingchien Huang; Chun Hu Cheng; Kaotao Lee; Bo Heng Liou

doi:10.1149/1.3072769

Performance improvement of metal-insulator-metal capacitors using postmetallization-annealed treatment on the Al₂O₃/TiO ₂/Al₂O₃ film

Chingchien Huang^*, Chun Hu Cheng, Kaotao Lee, Bo Heng Liou

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

This paper reports on metal-insulator-metal (MIM) capacitors comprised of Al₂O₃/TiO₂/Al₂O₃ laminate structure with postmetallization-annealing (PMA) treatment. By applying the laminate structure to TiO₂ capacitors, deposition of the Al ₂O₃ layer enables significant leakage current reduction while maintaining good electrical performance. For an Al₂O ₃/TiO₂/Al₂O₃ film with PMA treatment, the electrical characteristics can be further improved, which is mostly due to the passivation of the dielectric interface charges. We have achieved low leakage current of 6.4 × 10^-9 A/cm² at 1 V for 18.3 fF/μm² density Al₂O₃/TiO ₂/Al₂O₃ MIM capacitors. These results meet the International Technology Roadmap for Semiconductors requirements (year 2018) of 10 fF/μm² density and J (CV) < 7 fA (pFV).

Original language	English
Pages (from-to)	H123-H126
Journal	Electrochemical and Solid-State Letters
Volume	12
Issue number	4
DOIs	https://doi.org/10.1149/1.3072769
Publication status	Published - 2009
Externally published	Yes

ASJC Scopus subject areas

General Chemical Engineering
General Materials Science
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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title = "Performance improvement of metal-insulator-metal capacitors using postmetallization-annealed treatment on the Al2O3/TiO 2/Al2O3 film",

abstract = "This paper reports on metal-insulator-metal (MIM) capacitors comprised of Al2O3/TiO2/Al2O3 laminate structure with postmetallization-annealing (PMA) treatment. By applying the laminate structure to TiO2 capacitors, deposition of the Al 2O3 layer enables significant leakage current reduction while maintaining good electrical performance. For an Al2O 3/TiO2/Al2O3 film with PMA treatment, the electrical characteristics can be further improved, which is mostly due to the passivation of the dielectric interface charges. We have achieved low leakage current of 6.4 × 10-9 A/cm2 at 1 V for 18.3 fF/μm2 density Al2O3/TiO 2/Al2O3 MIM capacitors. These results meet the International Technology Roadmap for Semiconductors requirements (year 2018) of 10 fF/μm2 density and J (CV) < 7 fA (pFV).",

author = "Chingchien Huang and Cheng, {Chun Hu} and Kaotao Lee and Liou, {Bo Heng}",

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AU - Cheng, Chun Hu

AU - Lee, Kaotao

AU - Liou, Bo Heng

PY - 2009

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N2 - This paper reports on metal-insulator-metal (MIM) capacitors comprised of Al2O3/TiO2/Al2O3 laminate structure with postmetallization-annealing (PMA) treatment. By applying the laminate structure to TiO2 capacitors, deposition of the Al 2O3 layer enables significant leakage current reduction while maintaining good electrical performance. For an Al2O 3/TiO2/Al2O3 film with PMA treatment, the electrical characteristics can be further improved, which is mostly due to the passivation of the dielectric interface charges. We have achieved low leakage current of 6.4 × 10-9 A/cm2 at 1 V for 18.3 fF/μm2 density Al2O3/TiO 2/Al2O3 MIM capacitors. These results meet the International Technology Roadmap for Semiconductors requirements (year 2018) of 10 fF/μm2 density and J (CV) < 7 fA (pFV).

AB - This paper reports on metal-insulator-metal (MIM) capacitors comprised of Al2O3/TiO2/Al2O3 laminate structure with postmetallization-annealing (PMA) treatment. By applying the laminate structure to TiO2 capacitors, deposition of the Al 2O3 layer enables significant leakage current reduction while maintaining good electrical performance. For an Al2O 3/TiO2/Al2O3 film with PMA treatment, the electrical characteristics can be further improved, which is mostly due to the passivation of the dielectric interface charges. We have achieved low leakage current of 6.4 × 10-9 A/cm2 at 1 V for 18.3 fF/μm2 density Al2O3/TiO 2/Al2O3 MIM capacitors. These results meet the International Technology Roadmap for Semiconductors requirements (year 2018) of 10 fF/μm2 density and J (CV) < 7 fA (pFV).

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Performance improvement of metal-insulator-metal capacitors using postmetallization-annealed treatment on the Al₂O₃/TiO ₂/Al₂O₃ film

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