Performance improvement of metal-insulator-metal capacitors using postmetallization-annealed treatment on the Al2O3/TiO 2/Al2O3 film

Chingchien Huang, Chun Hu Cheng, Kaotao Lee, Bo Heng Liou

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2 Citations (Scopus)

Abstract

This paper reports on metal-insulator-metal (MIM) capacitors comprised of Al2O3/TiO2/Al2O3 laminate structure with postmetallization-annealing (PMA) treatment. By applying the laminate structure to TiO2 capacitors, deposition of the Al 2O3 layer enables significant leakage current reduction while maintaining good electrical performance. For an Al2O 3/TiO2/Al2O3 film with PMA treatment, the electrical characteristics can be further improved, which is mostly due to the passivation of the dielectric interface charges. We have achieved low leakage current of 6.4 × 10-9 A/cm2 at 1 V for 18.3 fF/μm2 density Al2O3/TiO 2/Al2O3 MIM capacitors. These results meet the International Technology Roadmap for Semiconductors requirements (year 2018) of 10 fF/μm2 density and J (CV) < 7 fA (pFV).

Original languageEnglish
Pages (from-to)H123-H126
JournalElectrochemical and Solid-State Letters
Volume12
Issue number4
DOIs
Publication statusPublished - 2009 Feb 24
Externally publishedYes

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ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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