TY - GEN
T1 - Performance Evaluation of AFeRAM under Low Temperature Operation
AU - Chen, Yi Chuan
AU - Chen, Yu Chen
AU - Hsiang, Kuo Yu
AU - Lee, Min Hung
AU - Su, Pin
N1 - Funding Information:
margin ≥ 0.1V due to smaller EBS and better energy efficiency due to lower operation voltage at lower temperature. Our study suggests that lowering temperature may be beneficial to the performance of AFE HZO memories. Acknowledgments This work is supported in part by the Ministry of Science and Technology, Taiwan, under 110-2218-EA49-014-MBK,110-2221-E-A49-136-MY2 and 110-2634-F-009-027, and in part by the "Center for Semiconductor Technology Research” from the Featured Areas Research Center Program within the framework of the Higher Education Sprout Project by the Ministry of Education in Taiwan. References [1] T. S. Boscke et al., “Ferroelectricity in hafnium oxide thin films,” Appl. Phys. Lett. 99, 102903, 2011. [2] T. Francois et al., “16kbit HfO2:Si-based 1T-1C FeRAM Arrays Demonstrating High Performance Operation and Solder Reflow Compatibility,” IEDM, pp. 33.1.1-33.1.4, 2021. [3] M. Sung et al., “Low Voltage and High Speed 1Xnm 1T1C FE-RAM with Ultra-Thin 5nm HZO,” IEDM, pp. 33.3.1-33.3.4, 2021. [4] K.-Y. Hsiang et al., “Novel Opposite Polarity Cycling Recovery (OPCR) of HfZrO2 Antiferroelectric-RAM with an Access Scheme Toward Unlimited Endurance,” IEDM, 2022. [5] S.-C. Chang et al., “FeRAM using Anti-ferroelectric Capacitors for High-speed and High-density Embedded Memory,” IEDM, pp. 33.2.1-33.2.4, 2021. [6] Z. Wang et al., “Cryogenic characterization of a ferroelectric field-effect-transistor,” Appl. Phys. Lett. 116, 042902, 2020. [7] J. Hur et al., “Characterizing Ferroelectric Properties of Hf0.5Zr0.5O2 From Deep-Cryogenic Temperature (4 K) to 400 K,” IEEE J. Explor. Solid-State Comput. Devices Circuits, vol. 7, no. 2, pp. 168-174, 2021. [8] Y.-C. Chen et al., “NLS based Modeling and Characterization of Switching Dynamics for Antiferroelectric/Ferroelectric Hafnium Zirconium Oxides,” IEDM, pp. 15.4.1-15.4.4, 2021. [9] P. D. Lomenzo et al., “Depolarization as Driving Force in Antiferroelectric Hafnia and Ferroelectric Wake-Up,” ACS Appl. Electron. Mater. 2, 1583-1595, 2020. [10] M. Pešić et al., “Built-In Bias Generation in Anti-Ferroelectric Stacks: Methods and Device Applications,” IEEE J. Electron Devices Soc., vol. 6, pp.1019-1025, 2018. [11] J. Okuno et al., “High-Endurance and Low-Voltage operation of 1T1C FeRAM Arrays for Nonvolatile Memory Application,” IMW, pp. 1-3, 2021.
Publisher Copyright:
© 2023 IEEE.
PY - 2023
Y1 - 2023
N2 - In this work, we have evaluated performance of Antiferroelectric-RAM (AFeRAM) under low temperature operation. With our nucleation limited switching (NLS)-based AFE model calibrated with the AFE HZO (Hf0.1 Zr 0.9 O2) experimental data, we have investigated the AFeRAM cell operation from 80K to 300K. Our study indicates that operating AFeRAM at low temperatures may improve the sensing margin, read/write time, and energy efficiency.
AB - In this work, we have evaluated performance of Antiferroelectric-RAM (AFeRAM) under low temperature operation. With our nucleation limited switching (NLS)-based AFE model calibrated with the AFE HZO (Hf0.1 Zr 0.9 O2) experimental data, we have investigated the AFeRAM cell operation from 80K to 300K. Our study indicates that operating AFeRAM at low temperatures may improve the sensing margin, read/write time, and energy efficiency.
UR - http://www.scopus.com/inward/record.url?scp=85158088819&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85158088819&partnerID=8YFLogxK
U2 - 10.1109/EDTM55494.2023.10103076
DO - 10.1109/EDTM55494.2023.10103076
M3 - Conference contribution
AN - SCOPUS:85158088819
T3 - 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023
BT - 7th IEEE Electron Devices Technology and Manufacturing Conference
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023
Y2 - 7 March 2023 through 10 March 2023
ER -
