Performance Evaluation of AFeRAM under Low Temperature Operation

Yi Chuan Chen; Yu Chen Chen; Kuo Yu Hsiang; Min Hung Lee; Pin Su

doi:10.1109/EDTM55494.2023.10103076

Performance Evaluation of AFeRAM under Low Temperature Operation

Yi Chuan Chen, Yu Chen Chen, Kuo Yu Hsiang, Min Hung Lee, Pin Su

Undergraduate Program of Electro-Optical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

In this work, we have evaluated performance of Antiferroelectric-RAM (AFeRAM) under low temperature operation. With our nucleation limited switching (NLS)-based AFE model calibrated with the AFE HZO (Hf0.1 Zr 0.9 O2) experimental data, we have investigated the AFeRAM cell operation from 80K to 300K. Our study indicates that operating AFeRAM at low temperatures may improve the sensing margin, read/write time, and energy efficiency.

Original language	English
Title of host publication	7th IEEE Electron Devices Technology and Manufacturing Conference
Subtitle of host publication	Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9798350332520
DOIs	https://doi.org/10.1109/EDTM55494.2023.10103076
Publication status	Published - 2023
Event	7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023 - Seoul, Korea, Republic of Duration: 2023 Mar 7 → 2023 Mar 10

Publication series

Name	7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023

Conference

Conference	7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023
Country/Territory	Korea, Republic of
City	Seoul
Period	2023/03/07 → 2023/03/10

ASJC Scopus subject areas

Safety, Risk, Reliability and Quality
Electronic, Optical and Magnetic Materials
Instrumentation
Electrical and Electronic Engineering

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/EDTM55494.2023.10103076

Cite this

Chen, Y. C., Chen, Y. C., Hsiang, K. Y., Lee, M. H., & Su, P. (2023). Performance Evaluation of AFeRAM under Low Temperature Operation. In 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023 (7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM55494.2023.10103076

Performance Evaluation of AFeRAM under Low Temperature Operation. / Chen, Yi Chuan; Chen, Yu Chen; Hsiang, Kuo Yu et al.
7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Chen, YC, Chen, YC, Hsiang, KY, Lee, MH & Su, P 2023, Performance Evaluation of AFeRAM under Low Temperature Operation. in 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023. 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023, Institute of Electrical and Electronics Engineers Inc., 7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023, Seoul, Korea, Republic of, 2023/03/07. https://doi.org/10.1109/EDTM55494.2023.10103076

Chen YC, Chen YC, Hsiang KY, Lee MH, Su P. Performance Evaluation of AFeRAM under Low Temperature Operation. In 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023. Institute of Electrical and Electronics Engineers Inc. 2023. (7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023). doi: 10.1109/EDTM55494.2023.10103076

Chen, Yi Chuan ; Chen, Yu Chen ; Hsiang, Kuo Yu et al. / Performance Evaluation of AFeRAM under Low Temperature Operation. 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023).

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abstract = "In this work, we have evaluated performance of Antiferroelectric-RAM (AFeRAM) under low temperature operation. With our nucleation limited switching (NLS)-based AFE model calibrated with the AFE HZO (Hf0.1 Zr 0.9 O2) experimental data, we have investigated the AFeRAM cell operation from 80K to 300K. Our study indicates that operating AFeRAM at low temperatures may improve the sensing margin, read/write time, and energy efficiency.",

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AB - In this work, we have evaluated performance of Antiferroelectric-RAM (AFeRAM) under low temperature operation. With our nucleation limited switching (NLS)-based AFE model calibrated with the AFE HZO (Hf0.1 Zr 0.9 O2) experimental data, we have investigated the AFeRAM cell operation from 80K to 300K. Our study indicates that operating AFeRAM at low temperatures may improve the sensing margin, read/write time, and energy efficiency.

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Performance Evaluation of AFeRAM under Low Temperature Operation

Abstract

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