INIS
aluminum
100%
applications
16%
density
16%
devices
33%
doped materials
100%
fluorination
16%
fluorine
100%
hysteresis
16%
interfaces
33%
layers
50%
passivation
16%
performance
100%
plasma
100%
power
16%
suppression
16%
thin films
100%
tin oxides
100%
transistors
100%
traps
33%
tuning
16%
Chemistry
Aluminum
100%
Application
16%
Chemical Passivation
16%
Density
16%
Device
33%
Donor
16%
Doping
16%
Fluorine
100%
Liquid Film
100%
Plasma
100%
Tin Oxide
100%
Engineering
Active Channel
20%
Applications
20%
Channel Layer
60%
Current Ratio
20%
Enhancement
100%
Hysteresis Phenomenon
20%
Interface Trap
20%
Low Density
20%
Passivation
20%
Performance
100%
Plasma
20%
Plasma Treatment
100%
Material Science
Density
20%
Devices
40%
Thin-Film Transistor
100%
Tin Oxide
100%