INIS
performance
100%
doped materials
100%
plasma
100%
transistors
100%
thin films
100%
aluminum
100%
tin oxides
100%
fluorine
100%
layers
50%
devices
33%
interfaces
33%
traps
33%
applications
16%
density
16%
power
16%
passivation
16%
hysteresis
16%
suppression
16%
tuning
16%
fluorination
16%
Chemistry
Liquid Film
100%
Plasma
100%
Tin Oxide
100%
Fluorine
100%
Aluminum
100%
Device
33%
Doping
16%
Application
16%
Density
16%
Donor
16%
Chemical Passivation
16%
Engineering
Performance
100%
Enhancement
100%
Plasma Treatment
100%
Channel Layer
60%
Passivation
20%
Applications
20%
Plasma
20%
Interface Trap
20%
Current Ratio
20%
Active Channel
20%
Hysteresis Phenomenon
20%
Low Density
20%
Material Science
Tin Oxide
100%
Thin-Film Transistor
100%
Devices
40%
Density
20%