Abstract
This letter reports on a tin oxide (SnO) thin-film transistor (TFT) with p-type conduction that uses aluminum (Al) doping in the SnO active channel layer. Performance enhancements were further achieved by applying fluorine plasma treatment on the p-type Al-doped SnO channel layer. The effects of the fluorine plasma treatment were also investigated. By tuning the power of the fluorine plasma treatment on the p-type Al-doped SnO channel layer, the optimal TFT device showed a very high on/off current ratio of 2.58 × 106 and a low threshold swing of 174 mV/decade, which could be attributed to the passivation effect of the plasma fluorination on the dominant donor-like traps at the SnO/HfO2 interface, as reflected by the suppression of the hysteresis phenomenon, the low density of interface traps, and the small subthreshold swing. The results indicate that the p-type Al-doped SnO TFT device with fluorine plasma treatment has considerable potential for application in future high-performance displays.
Original language | English |
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Article number | 7801931 |
Pages (from-to) | 210-212 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 38 |
Issue number | 2 |
DOIs | |
Publication status | Published - 2017 Feb |
Keywords
- Al-doped SnO
- TFT
- fluorine plasma
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering