Performance enhancements in p-type Al-doped tin-oxide thin film transistors by using fluorine plasma treatment

Po Chun Chen, Yu Chien Chiu, Guan Lin Liou, Zhi Wei Zheng, Chun Hu Cheng, Yung Hsien Wu

Research output: Contribution to journalArticle

9 Citations (Scopus)


This letter reports on a tin oxide (SnO) thin-film transistor (TFT) with p-type conduction that uses aluminum (Al) doping in the SnO active channel layer. Performance enhancements were further achieved by applying fluorine plasma treatment on the p-type Al-doped SnO channel layer. The effects of the fluorine plasma treatment were also investigated. By tuning the power of the fluorine plasma treatment on the p-type Al-doped SnO channel layer, the optimal TFT device showed a very high on/off current ratio of 2.58 × 106 and a low threshold swing of 174 mV/decade, which could be attributed to the passivation effect of the plasma fluorination on the dominant donor-like traps at the SnO/HfO2 interface, as reflected by the suppression of the hysteresis phenomenon, the low density of interface traps, and the small subthreshold swing. The results indicate that the p-type Al-doped SnO TFT device with fluorine plasma treatment has considerable potential for application in future high-performance displays.

Original languageEnglish
Article number7801931
Pages (from-to)210-212
Number of pages3
JournalIEEE Electron Device Letters
Issue number2
Publication statusPublished - 2017 Feb



  • Al-doped SnO
  • TFT
  • fluorine plasma

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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