Performance enhancements in p-type Al-doped tin-oxide thin film transistors by using fluorine plasma treatment

Po Chun Chen, Yu Chien Chiu, Guan Lin Liou, Zhi Wei Zheng, Chun-Hu Cheng, Yung Hsien Wu

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

This letter reports on a tin oxide (SnO) thin-film transistor (TFT) with p-type conduction that uses aluminum (Al) doping in the SnO active channel layer. Performance enhancements were further achieved by applying fluorine plasma treatment on the p-type Al-doped SnO channel layer. The effects of the fluorine plasma treatment were also investigated. By tuning the power of the fluorine plasma treatment on the p-type Al-doped SnO channel layer, the optimal TFT device showed a very high on/off current ratio of 2.58 × 10 6 and a low threshold swing of 174 mV/decade, which could be attributed to the passivation effect of the plasma fluorination on the dominant donor-like traps at the SnO/HfO 2 interface, as reflected by the suppression of the hysteresis phenomenon, the low density of interface traps, and the small subthreshold swing. The results indicate that the p-type Al-doped SnO TFT device with fluorine plasma treatment has considerable potential for application in future high-performance displays.

Original languageEnglish
Article number7801931
Pages (from-to)210-212
Number of pages3
JournalIEEE Electron Device Letters
Volume38
Issue number2
DOIs
Publication statusPublished - 2017 Feb 1

Fingerprint

Fluorine
Thin film transistors
Tin oxides
Aluminum
Oxide films
Plasmas
Fluorination
Passivation
Hysteresis
Tuning
Display devices
Doping (additives)
stannic oxide

Keywords

  • Al-doped SnO
  • TFT
  • fluorine plasma

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Performance enhancements in p-type Al-doped tin-oxide thin film transistors by using fluorine plasma treatment. / Chen, Po Chun; Chiu, Yu Chien; Liou, Guan Lin; Zheng, Zhi Wei; Cheng, Chun-Hu; Wu, Yung Hsien.

In: IEEE Electron Device Letters, Vol. 38, No. 2, 7801931, 01.02.2017, p. 210-212.

Research output: Contribution to journalArticle

Chen, Po Chun ; Chiu, Yu Chien ; Liou, Guan Lin ; Zheng, Zhi Wei ; Cheng, Chun-Hu ; Wu, Yung Hsien. / Performance enhancements in p-type Al-doped tin-oxide thin film transistors by using fluorine plasma treatment. In: IEEE Electron Device Letters. 2017 ; Vol. 38, No. 2. pp. 210-212.
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