TY - JOUR
T1 - Performance comparison of titanium-oxide resistive switching memories using GeOx and AlOx capping layers for flexible application
AU - Chou, Kun I.
AU - Cheng, Chun Hu
AU - Chin, Albert
PY - 2014/6
Y1 - 2014/6
N2 - To meet the requirements of flexible memory applications, we have compared two capping layers of GeOx and AlOx on a TiOy resistive random access memory (RRAM) at room temperature. A Ni/GeO x/TiOy/TaN RRAM shows a large resistance window of >102, 85 °C retention, a highresistance-state (HRS) activation energy (Ea) of 0.52 eV, and a good DC cycling of 103 cycles, which are significantly better than those of a Ni/ AlO x/TiOy/TaN RRAM, which has a high-defect-density dielectric of AlOx.
AB - To meet the requirements of flexible memory applications, we have compared two capping layers of GeOx and AlOx on a TiOy resistive random access memory (RRAM) at room temperature. A Ni/GeO x/TiOy/TaN RRAM shows a large resistance window of >102, 85 °C retention, a highresistance-state (HRS) activation energy (Ea) of 0.52 eV, and a good DC cycling of 103 cycles, which are significantly better than those of a Ni/ AlO x/TiOy/TaN RRAM, which has a high-defect-density dielectric of AlOx.
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U2 - 10.7567/JJAP.53.061502
DO - 10.7567/JJAP.53.061502
M3 - Article
AN - SCOPUS:84903168281
SN - 0021-4922
VL - 53
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 6
M1 - 061502
ER -