Performance comparison of titanium-oxide resistive switching memories using GeOx and AlOx capping layers for flexible application

Kun I. Chou, Chun-Hu Cheng, Albert Chin

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

To meet the requirements of flexible memory applications, we have compared two capping layers of GeOx and AlOx on a TiOy resistive random access memory (RRAM) at room temperature. A Ni/GeO x/TiOy/TaN RRAM shows a large resistance window of >102, 85 °C retention, a highresistance-state (HRS) activation energy (Ea) of 0.52 eV, and a good DC cycling of 103 cycles, which are significantly better than those of a Ni/ AlO x/TiOy/TaN RRAM, which has a high-defect-density dielectric of AlOx.

Original languageEnglish
Article number061502
JournalJapanese Journal of Applied Physics
Volume53
Issue number6
DOIs
Publication statusPublished - 2014 Jan 1

Fingerprint

Titanium oxides
random access memory
titanium oxides
Data storage equipment
cycles
Defect density
direct current
activation energy
requirements
Activation energy
defects
room temperature
Temperature

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Performance comparison of titanium-oxide resistive switching memories using GeOx and AlOx capping layers for flexible application. / Chou, Kun I.; Cheng, Chun-Hu; Chin, Albert.

In: Japanese Journal of Applied Physics, Vol. 53, No. 6, 061502, 01.01.2014.

Research output: Contribution to journalArticle

@article{a198f4666e75426f89ff6c6100d32659,
title = "Performance comparison of titanium-oxide resistive switching memories using GeOx and AlOx capping layers for flexible application",
abstract = "To meet the requirements of flexible memory applications, we have compared two capping layers of GeOx and AlOx on a TiOy resistive random access memory (RRAM) at room temperature. A Ni/GeO x/TiOy/TaN RRAM shows a large resistance window of >102, 85 °C retention, a highresistance-state (HRS) activation energy (Ea) of 0.52 eV, and a good DC cycling of 103 cycles, which are significantly better than those of a Ni/ AlO x/TiOy/TaN RRAM, which has a high-defect-density dielectric of AlOx.",
author = "Chou, {Kun I.} and Chun-Hu Cheng and Albert Chin",
year = "2014",
month = "1",
day = "1",
doi = "10.7567/JJAP.53.061502",
language = "English",
volume = "53",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "6",

}

TY - JOUR

T1 - Performance comparison of titanium-oxide resistive switching memories using GeOx and AlOx capping layers for flexible application

AU - Chou, Kun I.

AU - Cheng, Chun-Hu

AU - Chin, Albert

PY - 2014/1/1

Y1 - 2014/1/1

N2 - To meet the requirements of flexible memory applications, we have compared two capping layers of GeOx and AlOx on a TiOy resistive random access memory (RRAM) at room temperature. A Ni/GeO x/TiOy/TaN RRAM shows a large resistance window of >102, 85 °C retention, a highresistance-state (HRS) activation energy (Ea) of 0.52 eV, and a good DC cycling of 103 cycles, which are significantly better than those of a Ni/ AlO x/TiOy/TaN RRAM, which has a high-defect-density dielectric of AlOx.

AB - To meet the requirements of flexible memory applications, we have compared two capping layers of GeOx and AlOx on a TiOy resistive random access memory (RRAM) at room temperature. A Ni/GeO x/TiOy/TaN RRAM shows a large resistance window of >102, 85 °C retention, a highresistance-state (HRS) activation energy (Ea) of 0.52 eV, and a good DC cycling of 103 cycles, which are significantly better than those of a Ni/ AlO x/TiOy/TaN RRAM, which has a high-defect-density dielectric of AlOx.

UR - http://www.scopus.com/inward/record.url?scp=84903168281&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84903168281&partnerID=8YFLogxK

U2 - 10.7567/JJAP.53.061502

DO - 10.7567/JJAP.53.061502

M3 - Article

AN - SCOPUS:84903168281

VL - 53

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 6

M1 - 061502

ER -