Percolation conductivity in hafnium sub-oxides

D. R. Islamov, V. A. Gritsenko, Chun-Hu Cheng, A. Chin

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

In this study, we demonstrated experimentally that formation of chains and islands of oxygen vacancies in hafnium sub-oxides (HfOx, x<2) leads to percolation charge transport in such dielectrics. Basing on the model of Éfros-Shklovskii percolation theory, good quantitative agreement between the experimental and theoretical data of current-voltage characteristics was achieved. Based on the percolation theory suggested model shows that hafnium sub-oxides consist of mixtures of metallic Hf nanoscale clusters of 1-2nm distributed onto non-stoichiometric HfOx. It was shown that reported approach might describe low resistance state current-voltage characteristics of resistive memory elements based on HfOx.

Original languageEnglish
Article number262903
JournalApplied Physics Letters
Volume105
Issue number26
DOIs
Publication statusPublished - 2014 Dec 29

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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