Percolation conductivity in hafnium sub-oxides

D. R. Islamov, V. A. Gritsenko, Chun-Hu Cheng, A. Chin

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

In this study, we demonstrated experimentally that formation of chains and islands of oxygen vacancies in hafnium sub-oxides (HfOx, x<2) leads to percolation charge transport in such dielectrics. Basing on the model of Éfros-Shklovskii percolation theory, good quantitative agreement between the experimental and theoretical data of current-voltage characteristics was achieved. Based on the percolation theory suggested model shows that hafnium sub-oxides consist of mixtures of metallic Hf nanoscale clusters of 1-2nm distributed onto non-stoichiometric HfOx. It was shown that reported approach might describe low resistance state current-voltage characteristics of resistive memory elements based on HfOx.

Original languageEnglish
Article number262903
JournalApplied Physics Letters
Volume105
Issue number26
DOIs
Publication statusPublished - 2014 Dec 29

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hafnium
conductivity
oxides
low resistance
electric potential
oxygen

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Percolation conductivity in hafnium sub-oxides. / Islamov, D. R.; Gritsenko, V. A.; Cheng, Chun-Hu; Chin, A.

In: Applied Physics Letters, Vol. 105, No. 26, 262903, 29.12.2014.

Research output: Contribution to journalArticle

Islamov, D. R. ; Gritsenko, V. A. ; Cheng, Chun-Hu ; Chin, A. / Percolation conductivity in hafnium sub-oxides. In: Applied Physics Letters. 2014 ; Vol. 105, No. 26.
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