Paramagnetic dysprosium-doped zinc oxide thin films grown by pulsed-laser deposition

Fang Yuh Lo, Yi Chieh Ting, Kai Chieh Chou, Tsung Chun Hsieh, Cin Wei Ye, Yung Yuan Hsu, Ming Yau Chern, Hsiang Lin Liu

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17 Citations (Scopus)


Dysprosium(Dy)-doped zinc oxide (Dy:ZnO) thin films were fabricated on c-oriented sapphire substrate by pulsed-laser deposition with doping concentration ranging from 1 to 10 at.-%. X-ray diffraction (XRD), Raman-scattering, optical transmission spectroscopy, and spectroscopic ellipsometry revealed incorporation of Dy into ZnO host matrix without secondary phase. Solubility limit of Dy in ZnO under our deposition condition was between 5 and 10 at.-% according to XRD and Raman-scattering characteristics. Optical transmission spectroscopy and spectroscopic ellipsometry also showed increase in both transmittance in ultraviolet regime and band gap of Dy:ZnO with increasing Dy density. Zinc vacancies and zinc interstitials were identified by photoluminescence spectroscopy as the defects accompanied with Dy incorporation. Magnetic investigations with a superconducting quantum interference device showed paramagnetism without long-range order for all Dy:ZnO thin films, and a hint of antiferromagnetic alignment of Dy impurities was observed at highest doping concentration - indicating the overall contribution of zinc vacancies and zinc interstitials to magnetic interaction was either neutral or toward antiferromagnetic. From our investigations, Dy:ZnO thin films could be useful for spin alignment and magneto-optical applications.

Original languageEnglish
Article number213911
JournalJournal of Applied Physics
Issue number21
Publication statusPublished - 2015 Jun 7

ASJC Scopus subject areas

  • General Physics and Astronomy


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