Paramagnetic and ferromagnetic resonance studies on dilute magnetic semiconductors based on GaN

T. Kammermeier*, S. Dhar, V. Ney, E. Manuel, A. Ney, K. H. Ploog, F. Y. Lo, A. Melnikov, A. D. Wieck

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)


Magnetic resonance studies were preformed on the dilute magnetic semiconductor Gd : GaN. In samples grown by molecular beam epitaxy resonances were observed at temperatures below 50 K. The temperature dependence of the resonance field and the line width suggest a ferromagnetic origin. No similar signals were found in Gd implanted samples even for a Gd concentration ten times higher. At temperatures close to 5 K additional signals were observed near g = 2 in these samples. They are superimposed by a strong substrate signal which is observable in all samples and is attributed to nitrogen donors on sites of different symmetry in the SiC substrate crystal. Different possible explanations of our findings are discussed with special regard to a model suggesting magnetically polarized spheres of influence. By means of magnetic resonance we can not corroborate ferromagnetism at room temperature in Gd:GaN as suggested by SQUID data.

Original languageEnglish
Pages (from-to)1872-1875
Number of pages4
JournalPhysica Status Solidi (A) Applications and Materials Science
Issue number8
Publication statusPublished - 2008 Aug
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry


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