Parallel p-n junctions across nanowires by one-step ex situ doping

Ori Hazut, Bo Chao Huang, Adi Pantzer, Iddo Amit, Yossi Rosenwaks, Amit Kohn, Chia Seng Chang, Ya Ping Chiu, Roie Yerushalmi

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

The bottom-up synthesis of nanoscale building blocks is a versatile approach for the formation of a vast array of materials with controlled structures and compositions. This approach is one of the main driving forces for the immense progress in materials science and nanotechnology witnessed over the past few decades. Despite the overwhelming advances in the bottom-up synthesis of nanoscale building blocks and the fine control of accessible compositions and structures, certain aspects are still lacking. In particular, the transformation of symmetric nanostructures to asymmetric nanostructures by highly controlled processes while preserving the modified structural orientation still poses a significant challenge. We present a one-step ex situ doping process for the transformation of undoped silicon nanowires (i-Si NWs) to p-type/n-type (p-n) parallel p-n junction configuration across NWs. The vertical p-n junctions were measured by scanning tunneling microscopy (STM) in concert with scanning tunneling spectroscopy (STS), termed STM/S, to obtain the spatial electronic properties of the junction formed across the NWs. Additionally, the parallel p-n junction configuration was characterized by off-axis electron holography in a transmission electron microscope to provide an independent verification of junction formation. The doping process was simulated to elucidate the doping mechanisms involved in the one-step p-i-n junction formation.

Original languageEnglish
Pages (from-to)8357-8362
Number of pages6
JournalACS Nano
Volume8
Issue number8
DOIs
Publication statusPublished - 2014 Jan 1

Fingerprint

Nanowires
nanowires
Doping (additives)
Scanning tunneling microscopy
Nanostructures
Electron holography
Silicon
Materials science
scanning tunneling microscopy
Chemical analysis
Nanotechnology
Electronic properties
p-i-n junctions
Electron microscopes
Spectroscopy
Scanning
synthesis
materials science
nanotechnology
configurations

Keywords

  • doping
  • monolayer doping
  • nanowires
  • silicon
  • surface chemistry

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Hazut, O., Huang, B. C., Pantzer, A., Amit, I., Rosenwaks, Y., Kohn, A., ... Yerushalmi, R. (2014). Parallel p-n junctions across nanowires by one-step ex situ doping. ACS Nano, 8(8), 8357-8362. https://doi.org/10.1021/nn502855k

Parallel p-n junctions across nanowires by one-step ex situ doping. / Hazut, Ori; Huang, Bo Chao; Pantzer, Adi; Amit, Iddo; Rosenwaks, Yossi; Kohn, Amit; Chang, Chia Seng; Chiu, Ya Ping; Yerushalmi, Roie.

In: ACS Nano, Vol. 8, No. 8, 01.01.2014, p. 8357-8362.

Research output: Contribution to journalArticle

Hazut, O, Huang, BC, Pantzer, A, Amit, I, Rosenwaks, Y, Kohn, A, Chang, CS, Chiu, YP & Yerushalmi, R 2014, 'Parallel p-n junctions across nanowires by one-step ex situ doping', ACS Nano, vol. 8, no. 8, pp. 8357-8362. https://doi.org/10.1021/nn502855k
Hazut O, Huang BC, Pantzer A, Amit I, Rosenwaks Y, Kohn A et al. Parallel p-n junctions across nanowires by one-step ex situ doping. ACS Nano. 2014 Jan 1;8(8):8357-8362. https://doi.org/10.1021/nn502855k
Hazut, Ori ; Huang, Bo Chao ; Pantzer, Adi ; Amit, Iddo ; Rosenwaks, Yossi ; Kohn, Amit ; Chang, Chia Seng ; Chiu, Ya Ping ; Yerushalmi, Roie. / Parallel p-n junctions across nanowires by one-step ex situ doping. In: ACS Nano. 2014 ; Vol. 8, No. 8. pp. 8357-8362.
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