Paraelectric-Ferroelectric Transition in Hafnium-Oxide-Based Ferroelectric Memory

Chia Chi Fan; Yu Chien Chiu; Chien Liu; Wen Wei Lai; Chun Yuan Tu; Ming Huei Lin; Tun Jen Chang; Chun Yen Chang; Guan Lin Liou; Hsiao Hsuan Hsu; Cheng Yu Tang; Chun Hu Cheng

doi:10.1109/EDTM.2018.8421478

Paraelectric-Ferroelectric Transition in Hafnium-Oxide-Based Ferroelectric Memory

Chia Chi Fan, Yu Chien Chiu, Chien Liu, Wen Wei Lai, Chun Yuan Tu, Ming Huei Lin, Tun Jen Chang, Chun Yen Chang, Guan Lin Liou, Hsiao Hsuan Hsu, Cheng Yu Tang, Chun Hu Cheng

Department of Mechatronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

In this work, we report the paraelectric-ferroelectric transition of the ferroelectric HfZrO with buffered HfNO. Our experimental and simulated results reveal that the buffered HfNO plays a key role in paraelectric-ferroelectric switching and ferroelectric recovery during cycled switching. The transient current pulse measurement was employed to verify the switching mechanism.

Original language	English
Title of host publication	2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	280-282
Number of pages	3
ISBN (Print)	9781538637111
DOIs	https://doi.org/10.1109/EDTM.2018.8421478
Publication status	Published - 2018 Jul 26
Event	2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Kobe, Japan Duration: 2018 Mar 13 → 2018 Mar 16

Publication series

Name	2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings

Other

Other	2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018
Country/Territory	Japan
City	Kobe
Period	2018/03/13 → 2018/03/16

Keywords

Ferroelectric
HfZrO
Paraelectric

ASJC Scopus subject areas

Electrical and Electronic Engineering
Industrial and Manufacturing Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/EDTM.2018.8421478

Cite this

Fan, C. C., Chiu, Y. C., Liu, C., Lai, W. W., Tu, C. Y., Lin, M. H., Chang, T. J., Chang, C. Y., Liou, G. L., Hsu, H. H., Tang, C. Y., & Cheng, C. H. (2018). Paraelectric-Ferroelectric Transition in Hafnium-Oxide-Based Ferroelectric Memory. In 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings (pp. 280-282). Article 8421478 (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2018.8421478

Paraelectric-Ferroelectric Transition in Hafnium-Oxide-Based Ferroelectric Memory. / Fan, Chia Chi; Chiu, Yu Chien; Liu, Chien et al.
2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. p. 280-282 8421478 (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Fan, CC, Chiu, YC, Liu, C, Lai, WW, Tu, CY, Lin, MH, Chang, TJ, Chang, CY, Liou, GL, Hsu, HH, Tang, CY & Cheng, CH 2018, Paraelectric-Ferroelectric Transition in Hafnium-Oxide-Based Ferroelectric Memory. in 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings., 8421478, 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 280-282, 2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018, Kobe, Japan, 2018/03/13. https://doi.org/10.1109/EDTM.2018.8421478

Fan CC, Chiu YC, Liu C, Lai WW, Tu CY, Lin MH et al. Paraelectric-Ferroelectric Transition in Hafnium-Oxide-Based Ferroelectric Memory. In 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2018. p. 280-282. 8421478. (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings). doi: 10.1109/EDTM.2018.8421478

Fan, Chia Chi ; Chiu, Yu Chien ; Liu, Chien et al. / Paraelectric-Ferroelectric Transition in Hafnium-Oxide-Based Ferroelectric Memory. 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 280-282 (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings).

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title = "Paraelectric-Ferroelectric Transition in Hafnium-Oxide-Based Ferroelectric Memory",

abstract = "In this work, we report the paraelectric-ferroelectric transition of the ferroelectric HfZrO with buffered HfNO. Our experimental and simulated results reveal that the buffered HfNO plays a key role in paraelectric-ferroelectric switching and ferroelectric recovery during cycled switching. The transient current pulse measurement was employed to verify the switching mechanism.",

keywords = "Ferroelectric, HfZrO, Paraelectric",

author = "Fan, {Chia Chi} and Chiu, {Yu Chien} and Chien Liu and Lai, {Wen Wei} and Tu, {Chun Yuan} and Lin, {Ming Huei} and Chang, {Tun Jen} and Chang, {Chun Yen} and Liou, {Guan Lin} and Hsu, {Hsiao Hsuan} and Tang, {Cheng Yu} and Cheng, {Chun Hu}",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 ; Conference date: 13-03-2018 Through 16-03-2018",

year = "2018",

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doi = "10.1109/EDTM.2018.8421478",

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AU - Fan, Chia Chi

AU - Chiu, Yu Chien

AU - Liu, Chien

AU - Lai, Wen Wei

AU - Tu, Chun Yuan

AU - Lin, Ming Huei

AU - Chang, Tun Jen

AU - Chang, Chun Yen

AU - Liou, Guan Lin

AU - Hsu, Hsiao Hsuan

AU - Tang, Cheng Yu

AU - Cheng, Chun Hu

PY - 2018/7/26

Y1 - 2018/7/26

N2 - In this work, we report the paraelectric-ferroelectric transition of the ferroelectric HfZrO with buffered HfNO. Our experimental and simulated results reveal that the buffered HfNO plays a key role in paraelectric-ferroelectric switching and ferroelectric recovery during cycled switching. The transient current pulse measurement was employed to verify the switching mechanism.

AB - In this work, we report the paraelectric-ferroelectric transition of the ferroelectric HfZrO with buffered HfNO. Our experimental and simulated results reveal that the buffered HfNO plays a key role in paraelectric-ferroelectric switching and ferroelectric recovery during cycled switching. The transient current pulse measurement was employed to verify the switching mechanism.

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KW - Paraelectric

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BT - 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018

Y2 - 13 March 2018 through 16 March 2018

ER -

Paraelectric-Ferroelectric Transition in Hafnium-Oxide-Based Ferroelectric Memory

Abstract

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Keywords

ASJC Scopus subject areas

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