Paraelectric-Ferroelectric Transition in Hafnium-Oxide-Based Ferroelectric Memory

Chia Chi Fan, Yu Chien Chiu, Chien Liu, Wen Wei Lai, Chun Yuan Tu, Ming Huei Lin, Tun Jen Chang, Chun Yen Chang, Guan Lin Liou, Hsiao Hsuan Hsu, Cheng Yu Tang, Chun-Hu Cheng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In this work, we report the paraelectric-ferroelectric transition of the ferroelectric HfZrO with buffered HfNO. Our experimental and simulated results reveal that the buffered HfNO plays a key role in paraelectric-ferroelectric switching and ferroelectric recovery during cycled switching. The transient current pulse measurement was employed to verify the switching mechanism.

Original languageEnglish
Title of host publication2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages280-282
Number of pages3
ISBN (Print)9781538637111
DOIs
Publication statusPublished - 2018 Jul 26
Event2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Kobe, Japan
Duration: 2018 Mar 132018 Mar 16

Publication series

Name2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings

Other

Other2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018
CountryJapan
CityKobe
Period18/3/1318/3/16

Fingerprint

Hafnium oxides
Ferroelectric materials
Data storage equipment
Recovery
hafnium oxide

Keywords

  • Ferroelectric
  • HfZrO
  • Paraelectric

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Fan, C. C., Chiu, Y. C., Liu, C., Lai, W. W., Tu, C. Y., Lin, M. H., ... Cheng, C-H. (2018). Paraelectric-Ferroelectric Transition in Hafnium-Oxide-Based Ferroelectric Memory. In 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings (pp. 280-282). [8421478] (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2018.8421478

Paraelectric-Ferroelectric Transition in Hafnium-Oxide-Based Ferroelectric Memory. / Fan, Chia Chi; Chiu, Yu Chien; Liu, Chien; Lai, Wen Wei; Tu, Chun Yuan; Lin, Ming Huei; Chang, Tun Jen; Chang, Chun Yen; Liou, Guan Lin; Hsu, Hsiao Hsuan; Tang, Cheng Yu; Cheng, Chun-Hu.

2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. p. 280-282 8421478 (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Fan, CC, Chiu, YC, Liu, C, Lai, WW, Tu, CY, Lin, MH, Chang, TJ, Chang, CY, Liou, GL, Hsu, HH, Tang, CY & Cheng, C-H 2018, Paraelectric-Ferroelectric Transition in Hafnium-Oxide-Based Ferroelectric Memory. in 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings., 8421478, 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 280-282, 2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018, Kobe, Japan, 18/3/13. https://doi.org/10.1109/EDTM.2018.8421478
Fan CC, Chiu YC, Liu C, Lai WW, Tu CY, Lin MH et al. Paraelectric-Ferroelectric Transition in Hafnium-Oxide-Based Ferroelectric Memory. In 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2018. p. 280-282. 8421478. (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings). https://doi.org/10.1109/EDTM.2018.8421478
Fan, Chia Chi ; Chiu, Yu Chien ; Liu, Chien ; Lai, Wen Wei ; Tu, Chun Yuan ; Lin, Ming Huei ; Chang, Tun Jen ; Chang, Chun Yen ; Liou, Guan Lin ; Hsu, Hsiao Hsuan ; Tang, Cheng Yu ; Cheng, Chun-Hu. / Paraelectric-Ferroelectric Transition in Hafnium-Oxide-Based Ferroelectric Memory. 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 280-282 (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings).
@inproceedings{d98a63f689754331825d099b928d4904,
title = "Paraelectric-Ferroelectric Transition in Hafnium-Oxide-Based Ferroelectric Memory",
abstract = "In this work, we report the paraelectric-ferroelectric transition of the ferroelectric HfZrO with buffered HfNO. Our experimental and simulated results reveal that the buffered HfNO plays a key role in paraelectric-ferroelectric switching and ferroelectric recovery during cycled switching. The transient current pulse measurement was employed to verify the switching mechanism.",
keywords = "Ferroelectric, HfZrO, Paraelectric",
author = "Fan, {Chia Chi} and Chiu, {Yu Chien} and Chien Liu and Lai, {Wen Wei} and Tu, {Chun Yuan} and Lin, {Ming Huei} and Chang, {Tun Jen} and Chang, {Chun Yen} and Liou, {Guan Lin} and Hsu, {Hsiao Hsuan} and Tang, {Cheng Yu} and Chun-Hu Cheng",
year = "2018",
month = "7",
day = "26",
doi = "10.1109/EDTM.2018.8421478",
language = "English",
isbn = "9781538637111",
series = "2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "280--282",
booktitle = "2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings",

}

TY - GEN

T1 - Paraelectric-Ferroelectric Transition in Hafnium-Oxide-Based Ferroelectric Memory

AU - Fan, Chia Chi

AU - Chiu, Yu Chien

AU - Liu, Chien

AU - Lai, Wen Wei

AU - Tu, Chun Yuan

AU - Lin, Ming Huei

AU - Chang, Tun Jen

AU - Chang, Chun Yen

AU - Liou, Guan Lin

AU - Hsu, Hsiao Hsuan

AU - Tang, Cheng Yu

AU - Cheng, Chun-Hu

PY - 2018/7/26

Y1 - 2018/7/26

N2 - In this work, we report the paraelectric-ferroelectric transition of the ferroelectric HfZrO with buffered HfNO. Our experimental and simulated results reveal that the buffered HfNO plays a key role in paraelectric-ferroelectric switching and ferroelectric recovery during cycled switching. The transient current pulse measurement was employed to verify the switching mechanism.

AB - In this work, we report the paraelectric-ferroelectric transition of the ferroelectric HfZrO with buffered HfNO. Our experimental and simulated results reveal that the buffered HfNO plays a key role in paraelectric-ferroelectric switching and ferroelectric recovery during cycled switching. The transient current pulse measurement was employed to verify the switching mechanism.

KW - Ferroelectric

KW - HfZrO

KW - Paraelectric

UR - http://www.scopus.com/inward/record.url?scp=85051477124&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85051477124&partnerID=8YFLogxK

U2 - 10.1109/EDTM.2018.8421478

DO - 10.1109/EDTM.2018.8421478

M3 - Conference contribution

SN - 9781538637111

T3 - 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings

SP - 280

EP - 282

BT - 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

ER -