Paraelectric-Ferroelectric Transition in Hafnium-Oxide-Based Ferroelectric Memory

Chia Chi Fan, Yu Chien Chiu, Chien Liu, Wen Wei Lai, Chun Yuan Tu, Ming Huei Lin, Tun Jen Chang, Chun Yen Chang, Guan Lin Liou, Hsiao Hsuan Hsu, Cheng Yu Tang, Chun Hu Cheng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In this work, we report the paraelectric-ferroelectric transition of the ferroelectric HfZrO with buffered HfNO. Our experimental and simulated results reveal that the buffered HfNO plays a key role in paraelectric-ferroelectric switching and ferroelectric recovery during cycled switching. The transient current pulse measurement was employed to verify the switching mechanism.

Original languageEnglish
Title of host publication2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages280-282
Number of pages3
ISBN (Print)9781538637111
DOIs
Publication statusPublished - 2018 Jul 26
Event2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Kobe, Japan
Duration: 2018 Mar 132018 Mar 16

Publication series

Name2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings

Other

Other2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018
CountryJapan
CityKobe
Period18/3/1318/3/16

Keywords

  • Ferroelectric
  • HfZrO
  • Paraelectric

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Fan, C. C., Chiu, Y. C., Liu, C., Lai, W. W., Tu, C. Y., Lin, M. H., Chang, T. J., Chang, C. Y., Liou, G. L., Hsu, H. H., Tang, C. Y., & Cheng, C. H. (2018). Paraelectric-Ferroelectric Transition in Hafnium-Oxide-Based Ferroelectric Memory. In 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings (pp. 280-282). [8421478] (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2018.8421478