Abstract
The hole mobility enhancement can be as high as -18% for SiO2 and ∼20% for high-κ HfO2 gate stack dielectrics with the uniaxial compressive strain (0.2%) parallel to the channel. The highest drain current of -22% at saturation and ∼30% at linear region is observed for the bulk Si PMOS with high-K gate stacks. The drain current and hole mobility of bulk Si PMOS are degraded under the small biaxial tensile strain, while substrate-strained Si device shows opposite. The nonoptimized ring oscillator has the speed enhancement of ∼7% under the uniaxial tensile strain parallel to NMOS channel. Proper package strain also gives the drive-current as well as mobility enhancement at 100°C.
Original language | English |
---|---|
Pages (from-to) | 233-236 |
Number of pages | 4 |
Journal | Technical Digest - International Electron Devices Meeting, IEDM |
DOIs | |
Publication status | Published - 2004 |
Externally published | Yes |
Event | IEEE International Electron Devices Meeting, 2004 IEDM - San Francisco, CA, United States Duration: 2004 Dec 13 → 2004 Dec 15 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry