Package-strain-enhanced device and circuit performance

S. Maikap, M. H. Liao, F. Yuan, M. H. Lee, C. F. Huang, S. T. Chang, C. W. Liu

    Research output: Contribution to journalConference articlepeer-review

    21 Citations (Scopus)


    The hole mobility enhancement can be as high as ∼18% for SiO 2 and ∼20% for high-K HfO2 gate stack dielectrics with the uniaxial compressive strain (0.2%) parallel to the channel. The highest drain current of ∼22% at saturation and ∼30% at linear region is observed for the bulk Si PMOS with high-K gate stacks. The drain current and hole mobility of bulk Si PMOS are degraded under the small biaxial tensile strain, while substrate-strained Si device shows opposite. The non-optimized ring oscillator has the speed enhancement of ∼7% under the uniaxial tensile strain parallel to NMOS channel. Proper package strain also gives the drive-current as well as mobility enhancement at 100°C.

    Original languageEnglish
    Pages (from-to)233-238
    Number of pages6
    JournalTechnical Digest - International Electron Devices Meeting, IEDM
    Publication statusPublished - 2004 Dec 1
    EventIEEE International Electron Devices Meeting, 2004 IEDM - San Francisco, CA, United States
    Duration: 2004 Dec 132004 Dec 15

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Electrical and Electronic Engineering
    • Materials Chemistry


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