Abstract
The hole mobility enhancement can be as high as ∼18% for SiO 2 and ∼20% for high-K HfO2 gate stack dielectrics with the uniaxial compressive strain (0.2%) parallel to the channel. The highest drain current of ∼22% at saturation and ∼30% at linear region is observed for the bulk Si PMOS with high-K gate stacks. The drain current and hole mobility of bulk Si PMOS are degraded under the small biaxial tensile strain, while substrate-strained Si device shows opposite. The non-optimized ring oscillator has the speed enhancement of ∼7% under the uniaxial tensile strain parallel to NMOS channel. Proper package strain also gives the drive-current as well as mobility enhancement at 100°C.
| Original language | English |
|---|---|
| Pages (from-to) | 233-238 |
| Number of pages | 6 |
| Journal | Technical Digest - International Electron Devices Meeting, IEDM |
| Publication status | Published - 2004 Dec 1 |
| Event | IEEE International Electron Devices Meeting, 2004 IEDM - San Francisco, CA, United States Duration: 2004 Dec 13 → 2004 Dec 15 |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
Cite this
Maikap, S., Liao, M. H., Yuan, F., Lee, M. H., Huang, C. F., Chang, S. T., & Liu, C. W. (2004). Package-strain-enhanced device and circuit performance. Technical Digest - International Electron Devices Meeting, IEDM, 233-238.