Package-strain-enhanced device and circuit performance

S. Maikap; M. H. Liao; F. Yuan; M. H. Lee; C. F. Huang; S. T. Chang; C. W. Liu

Package-strain-enhanced device and circuit performance

S. Maikap, M. H. Liao, F. Yuan, M. H. Lee, C. F. Huang, S. T. Chang, C. W. Liu

Research output: Contribution to journal › Conference article › peer-review

Abstract

The hole mobility enhancement can be as high as ∼18% for SiO ₂ and ∼20% for high-K HfO₂ gate stack dielectrics with the uniaxial compressive strain (0.2%) parallel to the channel. The highest drain current of ∼22% at saturation and ∼30% at linear region is observed for the bulk Si PMOS with high-K gate stacks. The drain current and hole mobility of bulk Si PMOS are degraded under the small biaxial tensile strain, while substrate-strained Si device shows opposite. The non-optimized ring oscillator has the speed enhancement of ∼7% under the uniaxial tensile strain parallel to NMOS channel. Proper package strain also gives the drive-current as well as mobility enhancement at 100°C.

Original language	English
Pages (from-to)	233-238
Number of pages	6
Journal	Technical Digest - International Electron Devices Meeting, IEDM
Publication status	Published - 2004 Dec 1
Event	IEEE International Electron Devices Meeting, 2004 IEDM - San Francisco, CA, United States Duration: 2004 Dec 13 → 2004 Dec 15

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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@article{3880ff19194a4429920c6e547f37dc06,

title = "Package-strain-enhanced device and circuit performance",

abstract = "The hole mobility enhancement can be as high as ∼18% for SiO 2 and ∼20% for high-K HfO2 gate stack dielectrics with the uniaxial compressive strain (0.2%) parallel to the channel. The highest drain current of ∼22% at saturation and ∼30% at linear region is observed for the bulk Si PMOS with high-K gate stacks. The drain current and hole mobility of bulk Si PMOS are degraded under the small biaxial tensile strain, while substrate-strained Si device shows opposite. The non-optimized ring oscillator has the speed enhancement of ∼7% under the uniaxial tensile strain parallel to NMOS channel. Proper package strain also gives the drive-current as well as mobility enhancement at 100°C.",

author = "S. Maikap and Liao, {M. H.} and F. Yuan and Lee, {M. H.} and Huang, {C. F.} and Chang, {S. T.} and Liu, {C. W.}",

year = "2004",

month = dec,

day = "1",

language = "English",

pages = "233--238",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "IEEE International Electron Devices Meeting, 2004 IEDM ; Conference date: 13-12-2004 Through 15-12-2004",

}

TY - JOUR

T1 - Package-strain-enhanced device and circuit performance

AU - Maikap, S.

AU - Liao, M. H.

AU - Yuan, F.

AU - Lee, M. H.

AU - Huang, C. F.

AU - Chang, S. T.

AU - Liu, C. W.

PY - 2004/12/1

Y1 - 2004/12/1

N2 - The hole mobility enhancement can be as high as ∼18% for SiO 2 and ∼20% for high-K HfO2 gate stack dielectrics with the uniaxial compressive strain (0.2%) parallel to the channel. The highest drain current of ∼22% at saturation and ∼30% at linear region is observed for the bulk Si PMOS with high-K gate stacks. The drain current and hole mobility of bulk Si PMOS are degraded under the small biaxial tensile strain, while substrate-strained Si device shows opposite. The non-optimized ring oscillator has the speed enhancement of ∼7% under the uniaxial tensile strain parallel to NMOS channel. Proper package strain also gives the drive-current as well as mobility enhancement at 100°C.

AB - The hole mobility enhancement can be as high as ∼18% for SiO 2 and ∼20% for high-K HfO2 gate stack dielectrics with the uniaxial compressive strain (0.2%) parallel to the channel. The highest drain current of ∼22% at saturation and ∼30% at linear region is observed for the bulk Si PMOS with high-K gate stacks. The drain current and hole mobility of bulk Si PMOS are degraded under the small biaxial tensile strain, while substrate-strained Si device shows opposite. The non-optimized ring oscillator has the speed enhancement of ∼7% under the uniaxial tensile strain parallel to NMOS channel. Proper package strain also gives the drive-current as well as mobility enhancement at 100°C.

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M3 - Conference article

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SP - 233

EP - 238

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

SN - 0163-1918

T2 - IEEE International Electron Devices Meeting, 2004 IEDM

Y2 - 13 December 2004 through 15 December 2004

ER -