P-Type tunneling transistors with polycrystalline silicon by sequential lateral solidification growth technique

p-Type tunneling transistors with polycrystalline silicon were fabricated, and their electrical characteristics were studied. The temperature dependence of the tunneling current proves that the current of our device is indeed due to the band-to-band tunneling effect, rather than to the avalanche effect. The reliability of the polycrystalline silicon (poly-Si) tunneling transistors with a grain direction effect due to the active layer formed by the sequential lateral solidification (SLS) growth technique was examined. The device with a channel parallel to the grains has a high band-to-band tunneling current, low leakage current, and threshold voltage stability with constant current stress. Promising poly-Si tunneling transistors with a gate-controlled current and a low off-current have attracted attention for some applications such as in display backplanes, threedimensional integrated circuits (3D-ICs), and microwave circuits in the future.