P-Type tunneling transistors with polycrystalline silicon by sequential lateral solidification growth technique

Min-Hung Lee, Ssu Chieh Weng

    Research output: Contribution to journalArticle

    17 Citations (Scopus)

    Abstract

    p-Type tunneling transistors with polycrystalline silicon were fabricated, and their electrical characteristics were studied. The temperature dependence of the tunneling current proves that the current of our device is indeed due to the band-to-band tunneling effect, rather than to the avalanche effect. The reliability of the polycrystalline silicon (poly-Si) tunneling transistors with a grain direction effect due to the active layer formed by the sequential lateral solidification (SLS) growth technique was examined. The device with a channel parallel to the grains has a high band-to-band tunneling current, low leakage current, and threshold voltage stability with constant current stress. Promising poly-Si tunneling transistors with a gate-controlled current and a low off-current have attracted attention for some applications such as in display backplanes, threedimensional integrated circuits (3D-ICs), and microwave circuits in the future.

    Original languageEnglish
    Article number02BJ13
    JournalJapanese Journal of Applied Physics
    Volume51
    Issue number2 PART 2
    DOIs
    Publication statusPublished - 2012 Feb 1

    Fingerprint

    Polysilicon
    solidification
    Solidification
    Transistors
    transistors
    silicon
    Microwave circuits
    Threshold voltage
    Leakage currents
    Voltage control
    Display devices
    microwave circuits
    low currents
    threshold voltage
    avalanches
    integrated circuits
    leakage
    Temperature
    temperature dependence

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

    Cite this

    P-Type tunneling transistors with polycrystalline silicon by sequential lateral solidification growth technique. / Lee, Min-Hung; Weng, Ssu Chieh.

    In: Japanese Journal of Applied Physics, Vol. 51, No. 2 PART 2, 02BJ13, 01.02.2012.

    Research output: Contribution to journalArticle

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