P-Type tunneling transistors with polycrystalline silicon by sequential lateral solidification growth technique

Min Hung Lee, Ssu Chieh Weng

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

p-Type tunneling transistors with polycrystalline silicon were fabricated, and their electrical characteristics were studied. The temperature dependence of the tunneling current proves that the current of our device is indeed due to the band-to-band tunneling effect, rather than to the avalanche effect. The reliability of the polycrystalline silicon (poly-Si) tunneling transistors with a grain direction effect due to the active layer formed by the sequential lateral solidification (SLS) growth technique was examined. The device with a channel parallel to the grains has a high band-to-band tunneling current, low leakage current, and threshold voltage stability with constant current stress. Promising poly-Si tunneling transistors with a gate-controlled current and a low off-current have attracted attention for some applications such as in display backplanes, threedimensional integrated circuits (3D-ICs), and microwave circuits in the future.

Original languageEnglish
Article number02BJ13
JournalJapanese Journal of Applied Physics
Volume51
Issue number2 PART 2
DOIs
Publication statusPublished - 2012 Feb 1

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Polysilicon
solidification
Solidification
Transistors
transistors
silicon
Microwave circuits
Threshold voltage
Leakage currents
Voltage control
Display devices
microwave circuits
low currents
threshold voltage
avalanches
integrated circuits
leakage
Temperature
temperature dependence

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

P-Type tunneling transistors with polycrystalline silicon by sequential lateral solidification growth technique. / Lee, Min Hung; Weng, Ssu Chieh.

In: Japanese Journal of Applied Physics, Vol. 51, No. 2 PART 2, 02BJ13, 01.02.2012.

Research output: Contribution to journalArticle

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