TY - JOUR
T1 - p-Type tunneling field-effect transistors on (100)- and (110)-oriented Si substrates
AU - Lee, Min Hung
AU - Hsieh, Bin Fong
AU - Wu, Tong Han
AU - Chang, Shu Tong
PY - 2011/10
Y1 - 2011/10
N2 - P-Type tunneling field-effect transistors (TFETs) on (100)- and (110)-oriented Si substrates were fabricated, and their electrical characteristics were studied. High-k dielectric and metal gate were integrated as a gate stack, and the gate-last process was performed to obtain a high-quality dielectric layer and prevent crystallization. The orientation effect of p-type TFETs on (100) and (110) Si wafers is a high ION in the case of the (110) orientation as compared with that of the (100) p-type TFET, which is a high band-to-band tunneling current. The junction profile and effective mass were discussed to determine possible reasons for the orientation effect of p-type TFETs on (100) and (110) Si wafers.
AB - P-Type tunneling field-effect transistors (TFETs) on (100)- and (110)-oriented Si substrates were fabricated, and their electrical characteristics were studied. High-k dielectric and metal gate were integrated as a gate stack, and the gate-last process was performed to obtain a high-quality dielectric layer and prevent crystallization. The orientation effect of p-type TFETs on (100) and (110) Si wafers is a high ION in the case of the (110) orientation as compared with that of the (100) p-type TFET, which is a high band-to-band tunneling current. The junction profile and effective mass were discussed to determine possible reasons for the orientation effect of p-type TFETs on (100) and (110) Si wafers.
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U2 - 10.1143/JJAP.50.10PC01
DO - 10.1143/JJAP.50.10PC01
M3 - Article
AN - SCOPUS:80054889740
VL - 50
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 10 PART 2
ER -