p-Type tunneling field-effect transistors on (100)- and (110)-oriented Si substrates

Min Hung Lee, Bin Fong Hsieh, Tong Han Wu, Shu Tong Chang

    Research output: Contribution to journalArticlepeer-review

    Abstract

    P-Type tunneling field-effect transistors (TFETs) on (100)- and (110)-oriented Si substrates were fabricated, and their electrical characteristics were studied. High-k dielectric and metal gate were integrated as a gate stack, and the gate-last process was performed to obtain a high-quality dielectric layer and prevent crystallization. The orientation effect of p-type TFETs on (100) and (110) Si wafers is a high ION in the case of the (110) orientation as compared with that of the (100) p-type TFET, which is a high band-to-band tunneling current. The junction profile and effective mass were discussed to determine possible reasons for the orientation effect of p-type TFETs on (100) and (110) Si wafers.

    Original languageEnglish
    JournalJapanese Journal of Applied Physics
    Volume50
    Issue number10 PART 2
    DOIs
    Publication statusPublished - 2011 Oct

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

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