p-Type tunneling field-effect transistors on (100)- and (110)-oriented Si substrates

Min-Hung Lee, Bin Fong Hsieh, Tong Han Wu, Shu Tong Chang

Research output: Contribution to journalArticle

Abstract

P-Type tunneling field-effect transistors (TFETs) on (100)- and (110)-oriented Si substrates were fabricated, and their electrical characteristics were studied. High-k dielectric and metal gate were integrated as a gate stack, and the gate-last process was performed to obtain a high-quality dielectric layer and prevent crystallization. The orientation effect of p-type TFETs on (100) and (110) Si wafers is a high ION in the case of the (110) orientation as compared with that of the (100) p-type TFET, which is a high band-to-band tunneling current. The junction profile and effective mass were discussed to determine possible reasons for the orientation effect of p-type TFETs on (100) and (110) Si wafers.

Original languageEnglish
JournalJapanese Journal of Applied Physics
Volume50
Issue number10 PART 2
DOIs
Publication statusPublished - 2011 Oct 1

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Field effect transistors
field effect transistors
Substrates
wafers
Crystal orientation
Crystallization
crystallization
Metals
profiles
metals

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

p-Type tunneling field-effect transistors on (100)- and (110)-oriented Si substrates. / Lee, Min-Hung; Hsieh, Bin Fong; Wu, Tong Han; Chang, Shu Tong.

In: Japanese Journal of Applied Physics, Vol. 50, No. 10 PART 2, 01.10.2011.

Research output: Contribution to journalArticle

Lee, Min-Hung ; Hsieh, Bin Fong ; Wu, Tong Han ; Chang, Shu Tong. / p-Type tunneling field-effect transistors on (100)- and (110)-oriented Si substrates. In: Japanese Journal of Applied Physics. 2011 ; Vol. 50, No. 10 PART 2.
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